Transistors

Advanced Power MOSFET 250V 1.53Amp 4-Ohm DPAK TO-252AAFactory new reel - Obsolete Learn More

2.2Amp 250V Mosfet Transistor 2-Ohm typical Qg Total Gate Charge 8.1nC - typical Qgs Gate-Source Charge 1.4nC - dv/dt 5.5V/ns Idm-Pulsed 8.5A I=Pak thru-hole - tubed Min purchase per line item $1.00 = 3.$1.00 Learn More

Transistor, P Channel Mosfet. Max voltage: 400V. Max current: 2.7Amp. Package: TO-220, IPAK. P/N: FQU4P40TU. Note: RDS (on):3.10 Ohm @ VGS -10V. Learn More

ON Semiconductor - FAIRCHILD - FQU4P25TU - Transistor, P Channel Mosfet.

Status: Discontinued

Case/Package: TO-251-3

Mount: Through Hole

Continuous Drain Current (ID): 3.1 A

Current Rating: -3.1 A

Drain to Source Breakdown Voltage: -250 V

Drain to Source Resistance: 2.1 Ω

Drain to Source Voltage (Vdss): 250 V

Fall Time: 27 ns

Gate to Source Voltage (Vgs): 30 V

Input Capacitance: 420 pF

Operating Temperature: -55 °C to 150 °C

Max Power Dissipation: 2.5 W

Power Dissipation: 2.5 W

Rds On Max: 2.1 Ω

Rise Time: 60 ns

Turn-Off Delay Time: 14 ns

Voltage Rating (DC): -250 V

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FAIRCHILD - FQU4N25 Transistor, N Channel Mosfet.

Status: Discontinued

Max voltage: 250V.

Max current: 3Amp.

Package: TO-220, IPAK.

Note: RDS (on):1.75 Ohm @ VGS 10V.

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Transistor, N Channel Mosfet. Max voltage: 400V. Max current: 2Amp. Package: TO-220, IPAK. P/N: FQU3N40TU. Note: RDS (on):2.4 Ohm @ VGS 10V. Learn More

Transistors. P Channel mosfet 400V 2.7A, Rds On (Max) @ Id, Vgs 3.1 Ohm @ 1.35A, 10V, Input Capacitance (Ciss) @ Vds 680pF @ 25V, Power - Max2.5W,Gate Charge (Qg) @ Vgs, 23nC @ 10V, Package: DPAK TO-252AA. Learn More

500V 2.6Amp 2.7-OHM MOSFET D-PAK TO-252AA T&R Learn More

MOSFET P-CH 500V 2.1A DPAK TO-252AA on two Reels Learn More

Transistor, N CH MOSFET. Max voltage: 250V. Max current: 2.4Amp. Package: TO-252AA. P/N: FQD3N25TF. Note: RDS on: 2.2 Ohm. Learn More

FRS - 1900 pieces, FQD1N50TF at $0.68 each to Kyung Semicon 8-13-10.500V N-Channel MOSFET DPAK TO-252AA Learn More

Transistor, N Channel Mosfet. Max voltage: 500V. Max current: 9.0Amp. Package: DPAK. P/N: FQB9N50TM. Note: RDS (on): 0.73 Ohm @ VGS 10V. Learn More

Transistors. PNP 60V 600ma. Package: SMD SOT-323, from T/R. Package of 10. Learn More

FAIRCHILD - FDG6335N - Transistors.

N Channel mosfet 20V power trench.

Case: SC70-6 SMD 6 pin.

Package of 2.

More info: http://www.fairchildsemi.com/ds/FD/FDG6335N.pdf

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Transistors. Mosfet P-Ch power trench, specified 1.8V. Case: SC70-6 SMD 6 pin.Package of 3. More info: http://www.fairchildsemi.com/ds/FD/FDG6316P.pdf Learn More

Transistors. N-Channel mosfet, power trench, 2.5V specified.Case: SC70-6 SMD 6 pin. Package of 2. More info: http://www.fairchildsemi.com/ds/FD/FDG311N.pdf Learn More

Transistor, P Channel FET, dual. Drain source: -20V. Drain current: 2.8Amp. Dissipation: Single operation: 1.6 watt. Dual operation: 2 watt. Package: 8 SOIC SMD. From: Manufacture new T/R. P/N: NDS9933A. Operating temperature: -55 to 150 Deg C. Note: Enhancement mode. Learn More

Fairchild Semiconductor. - 2N4403 Transistor, PNP.

Voltage: 40V.

Current: 600mA.

Dissipation: 625mW.

Operating temperature: -55 to 150 Deg C.

Package: TO-92, plastic.

Note: Silicon.

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Transistor, NPN. Max voltage: 50V. Max current: 1 Amp. Dissipation: 0.8 watt. Package: TO-39, 1/2" cut leads. P/N: Base id: JANTX2N1711. Learn More

WE HAVE FDV303N IN STOCK T&R 3,000/reel FET 25V 0.68A (9U-49/D) Learn More

Transistor, N Channel FET. Max voltage: 500V(BR)DSS, 20V(BR)GSS. Max current: 9.6Amp. Dissipation: 125 watt. Package: TO-218 (TO-3P). P/N: 2SK565. Note: Silicon SIPMOS. Learn More

Phototransistor. NPN. High illumination-sensitivity. transparent resin lens. Package: TO-106-3 (OPTO-26). Note: Silicon planar. Learn More

Transistor, NPN. Max voltage: 50V. Max current: 1 Amp. Dissipation: 0.8 watt. Package: TO-39. P/N: Base id: JANTX2N1711. Learn More

Transistor, NPN. Max voltage: 25VCEO, 30VCBO. Max current: 800mA. Dissipation: 300mW. Package: TO-105 (TO-39). P/N: 2N5135. Note: Silicon. Learn More