Transistors

Transistor, NPN. Quad 50VCEO, 60VCBO. Current: 800mADC. Package: Hermetically sealed 14 Flatpack, all gold. Dimensions: overall 0.26" long x 0.080" high x 0.26" wide. Operating temperature: 175 Deg C. Note: SA2797. Military cage 07933. Learn More

Transistor, NPN. Max voltage: 60VCEO, 70VCBO. Max current: 50mA. Dissipation: 300mW one section, 600mW both sections. Package: TO-99-6. P/N: 2N2920. Operating temperature: -65 to 200 Deg C. Note: Silicon, dual NPN planar. Learn More

Silicon NPN Military Transistor NSN 5961-002877230 , Fairchild G390025S1 New TO-39 long gold leads Learn More

PULLS POWER BLOCKS Learn More

Transistor, NPN. Voltage: 80VCEO, 100VCB. Current: 10Amp. Dissipation: 150 watt. Operating temperature: -65 to 200 Deg C. Package: TO-3. Note: Silicon. Learn More

2SC2314 F Transistor, NPN.

Max Voltage: 45VCEO, 75VCBO.

Max Current: 1 Amp.

Dissipation: 750mW.

DC Current Gain hFE: 320

Package: TO-126.

Storage Temperature: -55 to 150 Deg C.

Application: 27MHz CB Transceiver Driver.

Note: Silicon Epitaxial Planar.

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FAIRCHILD - 2SD129 -Transisor NPN Power Similar to 2SD102 or 2SD877 No Tab

MARKED FSD129

NEW

MINIATURE TO-91

NO

Alternates: 2SD102, 2SD877

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Transistor, NPN. Max voltage: 80V. Max current: 5Amp. Dissipation: 6 Watt. Package: TO-39. P/N: 2N5337. Note: Bipolar. Learn More

FAIRCHILD - 2N4121 - PN4121 - Transistor, PNP.

Status: Discontinued

PNP Silicon Epitaxial Planar Transistor for Universal purpose.

Voltage: 40V.

Current 0.1Amp.

Dissipation: 0.2 watt.

HFE 70, FT 450

Package: TO-106 Gold leads.

Genuine Vintage Fairchild New Old Stock, Rare Difficult to find transistor.

Reported Alternates/Substitutions/Replacments (Always confirm your specification requirements before substituting):

AT431, AX1161, AX1174, AX1440, AX1456, BC309

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Transistor, NPN. Max voltage: 30V. Max current: 30mA. Dissipation: 200mW. Package: TO-72-4. P/N: 2N4135. Note: Silicon. Learn More

Transistor, PNP. Max voltage: 6V. Max current: 50mA. Dissipation: 150mW. Package: TO-18 long gold leads. P/N: 2N864. Note: Silicon small signal transistor. Amplifier/Switch. Learn More

Transistor, PNP. Max voltage: 15VCE, 35VCB. Dissipation: 200mW. Package: TO-39 gold leads. P/N: 2N467. Note: Alloy junction germanium. Learn More

Transistor, PNP. Max voltage: 30VCE, 75VCB. Dissipation: 100mW. Package: TO-39. P/N: 2N368. Note: Germanium. Learn More

Transistor, NPN. Voltage: 15VCEO, 30VCBO. Current: 100mA. Dissipation: 150mw. Package: TO-39 metal. Note: Germanium. Obsolete. From: Military lot. Learn More

FAIRCHILD - 2N3646 Transistor, NPN.

Status: Discontinued

Max voltage: 15VCEO, 40VCBO.

Max current: 200mA.

Dissipation: 200mW.

Package: TO-106 (TO-18) gold leads.

Application: Switching.

Note: Silicon.

NSN: 5961-00-062-3133

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NPN 40VCBO 15VCEO 200ma 360mw Silicon high speed switching transistors TO-18/3 gold leads. Learn More

Transistor, NPN. Max voltage: 6V. Max current: 5Amp. Dissipation: 30mW. Package: TO-5 gold leads. P/N: 2N1248. Note: Silicon. Learn More

Transistor, NPN. Max voltage: 20VCEO, 25VCBO. Max current: 200mA. Dissipation: 150mW. Package: TO-39 gold leads. P/N: 2N679. Note: Germanium. Military. Learn More

Transistor, PNP. Max voltage: 30Vce, 45VCB. Max current: 100mA. Dissipation: 0.225 watt. Package: TO-39 gold leads. P/N: 2N525. Note: Frequency response:1MHz. Alloy-junction germanium. Learn More

Transistor, PNP germanium. Max voltage: 16V. Dissipation: 200mW. Gain: 120 HFE. Package: TO-39 gold leads. P/N: 2N508. Note: Alloy junction, 4.5MHz. From: Military lot. Learn More

Transistor, NPN. Max voltage: 60V. Max current: 1Amp. Dissipation: 1 watt. Package: TO-39. P/N: 2N4235. Operating temperature: -65 to 200 Deg C. Note: Silicon power amplifier. Learn More

EVERLIGHT - ELPT202C – PT202C - Phototransistor, T1 3mm, 100mW, Visible & NIR. ELPT202C is a high-speed, high-sensitivity NPN silicon phototransistor manufactured by Everlight Electronics. Due to its water clear epoxy the device is sensitive to visible and near infrared radiation. It features a 940nm peak sensitivity wavelength, 30V collector-emitter voltage, and is designed for high responsiveness to visible and near-infrared radiation. Sensitivity: It is sensitive to both visible and near-infrared radiation due to its water-clear epoxy molding. • Peak Wavelength: Typically, 860nm or 940nm depending on the specific testing standard used by the supplier. • Package Type: A standard 3mm (T-1) through-hole package. • Response Time: It is designed for fast response times, making it suitable for light sensing and infrared detection. Key Specifications (Ta=25°C): • Package Type: 3mm (T-1) Through-hole • Lens Color: Water clear • Peak Sensitivity Wavelength: 940 nm • Spectral Bandwidth Range: 400 - 1100 nm • Collector-Emitter Voltage): 30 V • Emitter-Collector Voltage): 5 V • Collector Current: 20 mA • Power Dissipation: 75 mW • Operating Temperature: -25°C to +85°C Typical Applications • Light Sensing: General-purpose light detection in electronic projects. • Control Systems: Automatic door or shutter control mechanisms. • Infrared Detection: Used in remote control applications and infrared entry systems. • Optoelectronic switch, VCRs, Video camera, Floppy disk drive, Infrared applied system New Old Stock More info: http://www.everlight.com.ua/pdf/ir-transist/PT202C.pdf Learn More

Photo Transistor. T1 3mm package. Peak sensitive wavelength: 860nm. 100mW visible & NIR - near infrared. 30Vce 5Veb 0.4Vce (sat). Tr, Tf: 15uS Iceo (dard) 100nA. Ic(on): 0.16mA (min), 0.4mA typical. PT202C is a high speed and high sensitivity silicon NPN epitaxial planar phototransistor in a standard 3mm package. Due to its water clear epoxy the device is sensitive to visible and near infrared light. Package of 10. More info: http://www.everlight.com.ua/pdf/ir-transist/PT202C.pdf Learn More

Transistors. Silicon 50VDC max collector to base, 30VDC max collector to emitter voltage, static, base open and 5VDC max emitter to base voltage. Cross: Fairchild S4700. Military NSN 5961-00-784-7707. Case: TO-39 gold. Learn More