Texas Instruments - 2N2160 - Transistor, PN (N-Type Base) Unijunction. Gold
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Texas Instruments - 2N2160 - Transistor, PN (N-Type Base) Unijunction
Package: TO-5 (a TO-39 but with Long Gold Plated Leads and Base)
Case Connection: ISOLATED
Configuration: SINGLE
Emitter Current-Max: 70.0 mA
Inter-base Voltage-Max: 35.0 V
Intrinsic Stand-off Ratio-Min: 0.47
Intrinsic Stand-off Ratio-Max: 0.8
JEDEC-95 Code: TO-5
JESD-30 Code: O-MBCY-W3
Number of Elements: 1.0
Number of Terminals: 3
Operating Temperature: -65.0 C to 150.0 C
Package Body Material: METAL
Package Shape: ROUND
Package Style: CYLINDRICAL
Peak Point Current-Max: 25.0 µA
Power Dissipation-Max (Abs): 0.45 W
Static Inter-base Res-Min: 4.0 K ohm
Static Inter-base Res-Max: 12.0 K ohm
Transistor Application: SWITCHING
Transistor Element Material: SILICON
Valley Point Current-Min: 8.0 mA
NSN 5961-00-985-9067
| SKU | 134080 |
|---|---|
| Condition | FN - FACTORY NEW |
| Part Number | 2N2160 |
| Alternative Part Number | NSN 5961-00-985-9067 |
Texas Instruments - 2N2160 - Transistor, PN (N-Type Base) Unijunction
Package: TO-5 (a TO-39 but with Long Gold Plated Leads and Base)
Case Connection: ISOLATED
Configuration: SINGLE
Emitter Current-Max: 70.0 mA
Inter-base Voltage-Max: 35.0 V
Intrinsic Stand-off Ratio-Min: 0.47
Intrinsic Stand-off Ratio-Max: 0.8
JEDEC-95 Code: TO-5
JESD-30 Code: O-MBCY-W3
Number of Elements: 1.0
Number of Terminals: 3
Operating Temperature: -65.0 C to 150.0 C
Package Body Material: METAL
Package Shape: ROUND
Package Style: CYLINDRICAL
Peak Point Current-Max: 25.0 µA
Power Dissipation-Max (Abs): 0.45 W
Static Inter-base Res-Min: 4.0 K ohm
Static Inter-base Res-Max: 12.0 K ohm
Transistor Application: SWITCHING
Transistor Element Material: SILICON
Valley Point Current-Min: 8.0 mA
NSN 5961-00-985-9067
