Memory
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RCA - CDM6116AE2 - IC, Memory. CMOS SRAM.RCA - CDM6116AE2 IC, Memory.
CMOS SRAM multiplexed I/O.
2048 word 8 bit.
Package: 24 Dip.
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Texas Instruments - TMS2564JDL-50 - IC, memory. EPROM 8K x 8, 5V.$5.00IC, memory. EPROM 8K x 8, 5V. Case: 28 Cdip gold, tarnished leads. Learn More -
Hitachi - HN27C256AG-10 - UV Erasable Programmable ROM, 32768-word × 8-bit, 28 Pin CDIPIN STOCK - MORE THAN 1,000 READY TO SHIP!Hitachi - HN27C256AG-10 - UV Erasable Programmable ROM, 32768-word × 8-bit
Hitachi HN27C256AG is a 256-kbit ultraviolet erasable and electrically programmable ROM, featuring high speed and low power dissipation. Fabricated on advanced fine process and high speed circuitry technique, the HN27C256AG makes high speed access time possible for 16 bit microprocessors such as the 8086 and 68000. And low power dissipation in active and standby modes matches our CMOS 256-kbit EPROM. In programming operation, the HN27C256AG realizes faster programming times than our conventional 256-kbit EPROM by Hitachi’s Fast High-Reliability Programming Algorithm. Pin arrangement, pin configuration and programming voltage are compatible with our 256-kbit EPROM series, therefore existing programmers can be used with the HN27C256AG.
High speed -Access time: 100 ns (max)
• Low power dissipation - Active mode: 25 mW (typ) (f = 1 MHz), Standby mode: 5 µW (typ)
• High reliability and fast programming - Programming voltage: +12.5 V DCPGM12.5V
Package: 600-mil 28-pin cerdip (DG-28)
Made in Japan
Alternate: Philips 27C256-20N
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Texas Instruments - TBP34L10-25N - DIP PROMSpecial Price $6.00 Regular Price $8.00DIP PROM Learn More -
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ST MICROELECTRONICS - M28F201-150K1 - IC, memory. Parallel 5V 2M-Bit 256K 150ns.$5.00IC, memory. Parallel 5V 2M-Bit 256K 150ns. Flash memory. Package: 32 PLCC. Clean socket pulls. Used/Removed from equipment. Learn More -
National Semiconductor Corp - NM1600N35 - IC, memory. SRAM, 2.0V data retention.$5.00IC, memory. SRAM, 2.0V data retention. Package: 22 Dip. Used/Removed from equipment. Learn More -
ISSI - IS61C1024-20J - IC, memory. CMOS SRAM 128K x 8.$5.00IC, memory. CMOS SRAM 128K x 8. Package: 32 SOJ SMD. Used/Removed from equipment. Integrated Silicon Solutions Inc. Learn More -
Catalyst - CAT22C10P-30 - IC, SRAM. NVSRAM, 256 Bit, 64 x 4, 18 Dip.Special Price $5.98 Regular Price $7.50Catalyst - CAT22C10P-30 - IC, SRAM. NVSRAM
The CAT22C10 NVRAM is a 256-bit nonvolatile memory organized as 64 words x 4 bits. The high speed Static RAM array is bit for bit backed up by a nonvolatile E2PROM array which allows for easy transfer of data from RAM array to E2PROM (STORE) and from E2PROM to RAM (RECALL). STORE operations arecompleted in 10ms max.256-Bit Nonvolatile CMOS Static RAM
64 x 4
Parallel
5V supply voltage.
10 Year Data Retention
Case: 18 Dip. New
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ALTERA - EPM7128ELC84-15 - IC, memory. PLD. Pulls.Special Price $6.00 Regular Price $10.00IC, memory. Programmable Logic Device Family. Package: 84 PLCC, socket pulls. Learn More -
ZMD - U6264ADC-10LL - IC, memory. Standard 8K x 8 SRAM.$5.00IC, memory. Standard 8K x 8 SRAM. Package: 28 dip. Learn More -
Toshiba - TC5514P - 1024 x 4-Bit CMOS Static RAM Single 5.0V SupplySpecial Price $5.98 Regular Price $8.50Toshiba - TC5514P - 1024 x 4-Bit CMOS Static RAM
Access Time-Max: 450.0 ns
Memory Density: 4096.0 bit
Memory IC Type: STANDARD SRAM
Number of Terminals: 18
Number of Words: 1024.0 words
Operating Mode: ASYNCHRONOUS
Operating Temperature: -30.0 C to 85.0 C
Output Characteristics: 3-STATE
Standby Current-Max: 2.0E-5 Amp
Standby Voltage-Min: 2.0 V
Supply Voltage-Nom (Vsup): 5.0 V
Technology: CMOS
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Texas Instruments - TMS27C010A-20JL - 32 PIN EPROM USED$5.00PROGRAMMABLE READ-ONLY MEMORIES32 PIN EPROM USED ULTRAVOILET ERASABLE Learn More
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Texas Instruments - TIBPAL20X10-20CNT - IC, memory. Fuse-PAL.$5.00IC, memory. Fuse-Programmable array logic device (FPAL). EX-OR,10 Registered. 20 Inputs. 10 Outputs. 3 State. Package: 24 Dip. Learn More
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SYNERTEK - SY2114AL-3 - IC, memory. SRAM, DRAM, Video Ram.$6.00IC, memory. SRAM, DRAM, Video Ram. 1024 x 4, 300ns. Package: 18 Cdip, perfect socket pulls. Learn More
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SONY - SRM20256LM12 - Simm Board. 11 x SRM20256LM12.$5.00Simm Board. Each with 11 pieces SRM20256LM12, soldered on. IC, CMOS. 256K Bit Static RAM. Learn More
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SIGNETICS - N82S23B - IC, memory. PROM 256-bit TTL bipolar 32 x 8.$5.95IC, memory. PROM 256-bit TTL bipolar 32 x 8. Package: 16 Dip. Note: HM7602. Learn More
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SIGNETICS - 2102A-2N - IC, Memory. SRAM 1024-Bit Read/Write MOS.Special Price $5.98 Regular Price $8.00Out of stockSIGNETICS - 2102A-2N - IC,
Memory. SRAM 1024-Bit Read/Write MOS.
NSN 5962-01-063-4749
Package: Dip.
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SIGNETICS - 82S191ACJA - IC, memory. 16K (2K x 8) TTL bipolar PROM.$6.00IC, memory. 16K (2K x 8) TTL bipolar PROM. Package: 24 Cdip, perfect socket pulls. Used/Removed from equipment. Note: Military. Nice condition. Learn More
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RCA - CDM6116AE3 - IC, memory. CMOS SRAM.$5.95IC, memory. CMOS SRAM multiplexed I/O. 2048 word 8 bit. Package: 24 Dip. Learn More -
NEC Corporation - MC41256A4A-15 - IC. DRAM memory module.$5.00IC. DRAM memory module. Four 8264-15, 64K x 4 surface mount ic's. Package: 22 Pin SIP module. Board manufactured by Mostek. Learn More
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Motorola - MCM6665AP20 - IC, Memory. DRAM 64K x 1.Motorola - MCM6665AP20 - IC, memory.
DRAM 64K x 1.
Genuine Motorola - New Old Stock
Package: 16 Dip.
Genuine Motorola - New Old Stock - Rare
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Motorola - MCM2016HN55 - IC, Memory. GP SRAM.Special Price $5.98 Regular Price $7.50IN STOCK - MORE THAN 100 READY TO SHIP!Motorola - MCM2016HN55 - IC, Memory. GP SRAM.
Status Discontinued
Access Time-Max: 55.0 ns
Memory IC Type: CACHE SRAM
Number of Terminals: 24 DIP
Number of Words: 2048.0 words
Operating Mode: ASYNCHRONOUS
Operating Temperature: 0.0 C to 70.0 C
Output Characteristics 3-STATE
Supply Voltage-Nom (Vsup): 5.0 V
Additional Information: https://www.datasheets360.com/pdf/-7893740272701247320
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Motorola - MCM6926AWJ15 - IC, memory. 128K x 9 Bit fast SRAM. Used.$5.00IC, memory. 128K x 9 Bit fast SRAM. Package: 32 SMD, socket pulls. Learn More
