Transistors

Transistor, PNP. Max voltage: 40V. Max current: 15Amp. Dissipation: 115 watt. Package: TO-3 aluminum gold leads. P/N: MJ2901. Application: GP switching and amplifier. Note: Silicon. Maybe replaced with Synertek. Learn More

Transistor, PNP. Voltage: 25V. Current: 200mA. Dissipation: 625mW. Operating temperature: -55 to 150 Deg C. Package: TO-92, plastic. Note: Silicon. House numbered: 183-4. Package of 20. Learn More

Hitachi - 2SB337 Transistor, PNP Germanium.

Status: Discontinued

Maximum Collector Power Dissipation (Pc): 12 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 1 V

Maximum Collector Current |Ic max|: 7 A

Max. Operating Junction Temperature (Tj): 90 °C

Transition Frequency (ft): 0.125 MHz

Forward Current Transfer Ratio (hFE), MIN: 50

Package: TO-3 Steel

Note: New Old Stock - Highly discounted due to transistor are operable but may not meet all of the original manufactures specifications completely. One customer reportedly did some testing on a sample and reported transistor worked fine but did not meet all specs. Over 700 Transistors sold with no returns.

Made In Japan

Genuine Hitachi - New Old Stock - Rare

Alternates: ECG 104, ECG 121, NTE 104, NTE 121 

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Transistor, IGBT. Insulated gate bipolar. Max voltage: 600V? Max current: 150Amp. Package: Module (2-pack). P/N: 2MBI150-20. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Label is torn off. We believe this is 150A 600V or 1200V? Part is being Sold As Is. Learn More

Toshiba - MG25J1BS11 Transistor, IGBT.

Status: Discontinued

Max voltage: 600V (.6KV).

Max current: 25Amp.

Package: Module with Hardware.

Made in Japan

New Old Stock

 

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MicroChip - Microsemi - APTM50HM38FG - 4 N-Channel Full-Bridge MOSFET Power Module

Trans MOSFET Array Dual N-CH 500V 90A 12-Pin Case SP6

MOSFET Type: FREDFET 7

Mount: Chassis Mount, Screw

Number of Contacts: 6

Continuous Drain Current: (ID) 90 A

Drain to Source Voltage: (Vdss) 500 V

Fall Time: 77 ns

Gate to Source Voltage (Vgs): 30 V

Input Capacitance: 1.2 nF

Operating Temperature: -40 C to 150 °C

Max Power Dissipation: 694 W

Number of Elements: 4

Power Dissipation: 694 W

Rds On Max: 45 mΩ

Rise Time: 35 ns

Turn-Off Delay Time: 87 ns

Turn-On Delay Time: 18 ns

Approximate Dimensions: See Attached Detailed Diagram

RoHS Compliant

Does not include mounting hardware.

Additional Information: https://www.microsemi.com/document-portal/doc_download/8189-aptm50hm38fg-datasheet

Applications: Welding converters, Switched Mode Power Supplies, Uninterruptible Power Supplies, Motor control

Note: Microsemi Corporation is a wholly owned subsidiary of Microchip Technology Inc.

 

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Powerex CM1000HA-25H Power Transistor Module IGBT, 1000 Amp 1200V. Single module.

Collector Emitter Breakdown Voltage: 1.2 kV

Collector Emitter Voltage (VCEO): 3.6 V

Element Configuration: Single

Input: Standard

Input Capacitance: 200 nF

Max Collector Current: 1 kA

Max Power Dissipation: 5.8 kW

Compliance: RoHS Compliant     

Applications: AC motor control. Motion/Servo Control. Uninterruptible power supplies, Welding power supplies. Laser power supplies. Module Case, With Hardware.

 

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Zetex - ZVN2106A - Transistor, N Channel Vertical DMOS FET.

Voltage: 60 Vds.

Current: ID (Cont) 450mA.

RDS (on): 2 Ohm.

Dissipation: 700mW.

Operating Temperature: -55 to 150 Deg C.

Package: TO-92, Plastic.

New Old Stock

Note: Enhancement mode.

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Transistors, darlington. Single 100Amp 450V. Case: module. Learn More

Transistor, NPN. Max voltage: 15VCEO, 40VCBO. Max current: 300mA. Dissipation: 350mW. Package: TO-92 plastic. P/N: PN3646. Operating temperature: -55 to 150 Deg C. Note: Switching. Learn More

MPS6531 Transistor, NPN.

Voltage: 40VCEO, 60VCBO.

Current: 1Amp.

Dissipation: 625mW.

Operating temperature: -55 to 150 Deg C.

Package: TO-92, plastic.

Note: Silicon.

Unmarked device, guaranteed.

Lot of 10

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Transistor, NPN. Voltage: 60VCEO, 70VCBO. Current: 6 Amp. Dissipation: 30 watt. Operating temperature: -55 to 150 Deg C. House numbered: ERS263TJ. Package: TO-220. Note: Silicon darlington epitaxial planar. May replace: 2SD1190. Learn More

Transistor, NPN. Max voltage: 400VCEO, 500VCBO. Max current: 20 Amp. Dissipation: 114 watt. Package: TO-3 (TO-204) steel. P/N: GSRU20040. Note: Silicon, low frequency. Military. High Voltage. Learn More

2N3417 Transistor, NPN.

Max voltage: 50V.

Max current: 500mA.

Dissipation: 625mW. P

ackage: TO-92 plastic body, tarnishing leads. P/N: 2N3417.

Cross NTE192A.

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PNP Silicon transistor. Voltage: -30VCEO, -35VCBO. Current: 100mA. Dissipation: 200mW. Package: TO-98var. Note: Silicon.

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2N5810 HOUSE - Transistor, NPN. Small Signal Transistor.

Max voltage: 25VCEO, 35VCBO.

Max current: 750mA.

Dissipation: 625mW.

Package: TO-92 Plastic. P

House# 180-1.

Operating/Storage Temperature: -55 to 150 Deg C.

Note: Silicon Planar Epitaxial.

Noew Old Stock

Package of 10.

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2N5770 Transistor, NPN.

Max voltage: 15VCEO, 30VCBO.

Max current: 50mA.

Dissipation: 350mW.

Package: TO-92.

Operating temperature: -55 to 150 Deg C.

Note: Silicon planar epitaxial.

Alternates: ECG108, SK3452

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2N5172 Transistor, NPN.

Max Voltage: 25V.

Collector Current: 500mA.

Dissipation: 625mW.

Package: TO-92.

Note: GP Amplifier.

Operating temperature: -55 to 150 Deg C.

Unmarked, red dot.

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2N5087 Amplifier Transistor, PNP silicon.

Low Power Low Noise General Purpose.

Max Voltage: 50V.

Max Current: 50mA.

Dissipation: 625mw.

Package: TO-92.

Marked: NP2N5087.

Alternates: BC322, KT3107J

 

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Transistor, PNP. Voltage: 40V. Current: 600mA. Dissipation: 625mW. Operating temperature: -55 to 150 Deg C. House numbered 010-012. Package: TO-92, plastic. Note: Silicon. Package of 25. Learn More

Transistor, NPN. Max voltage: 400V. Max current: 3 Amp. Dissipation: 40 watt. Package: TO-220. P/N: UMT1204. Note: 5Amp peak, 1Amp continuous. Operating and storage temperature -65 Deg to 150DegC. Silicon. Learn More

Transistor. Military. Case: TO-3 steel. No other information available. Learn More

Tung Sol - TS604 Vinatge Transistor, Germanium PNP.

Small Signal Transistor

Status: Discontinued

Absolute Max. Power Diss. (W): 200m

h(fe) Min. SS Current Gain.: 60

I(C) Abs.(A) Collector Current: 400m

@I(C) (A) (Test Condition): 10m

I(CBO) Max. (A): 20u

Package: TO-9

V(BR)CBO (V): 20

V(BR)CEO (V): 18

@V(CE) (V) (Test Condition): 1.0

Max voltage: 18V.

Max current: 400ma, 200mw.

Package: TO-9 (TO-5 Long Leads). 

Application: Rare: Vintage TV Transistor 

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Transistor. Top is actually marked TRW 201, side is marked B-022. Package: TO-39. Learn More