On Sale

ROHM - 1N3064 - Diode.

Silicon Switching 75V 10mA 0.1uA.

Case: DO-35 Glass Axial Leads.

Package of 10.

Genuine ROHN - New Old Stock 

Alternate: RLS4153

Motorola - MRF515 - Transistor, NPN.

Max voltage: 12.5V.

Dissipation: 0.12 watt in, 0.75 watt out.

Package: TO-39 (TO-205AD).

Note: RF Class C amplifier.

UHF FM 470MHz.

Power gain: 8dB.

Genuine Motorla - New Old Stock - Rare

Note: New. All '8750 date codes.

Motorola - MRF914 - Transistor, NPN.

Max voltage: 12VCEO, 20VCBO.

Max current: 40mA.

Dissipation: 200mW.

Package: TO-72 Metal/Gold.

Note: RF & Microwave.

Silicon. High FT - 4.5 GHz (typ) @ IC = 20 mAdc.

Motorola - MRF904 - Transistor, RF Small Signal.

Max voltage: 15V.

Max current: 30mA.

Dissipation: 200mw.

Gain: 4 GHz 15ma.

Package: TO-72-4 (Case 20-03).

Motorola - MRF581 - Transistor, NPN.

Max voltage: 18VCEO, 30VCBO.

Max current: 200mA.

Dissipation: 2.5 Watt.

Package: Case 317-01 Macro-X.

Application: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.

Note: RF & Microwave.

Silicon, High Gain, Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz.

Motorola - MRF247 - Transistor, NPN.

Max voltage: 18VCEO, 36VCBO.

Max current: 20Amp peak.

Dissipation: 75 watt.

Package: 316-01 gold.

Application: Designed for 12.5V VHF FM transmitters.

Note: RF Silicon, 175MHz.

Parts are unmarked.

Alternate: Toshiba 2SC2782

Motorola - MRF240 - Transistor, NPN.

Max Voltage: 16VCEO, 36VCBO.

Max Current: 8 Amp.

Dissipation: 100 Watt.

Low Intermodulation Distortion 

Package: 145A-09 Stud, Gold Plated.

Note: RF. Silicon, 145 - 175MHz.

Genuine Motorola - New Old Stock

Application: Designed for 13.6V VHF large signal Class C and Class AB Linear Power Amplifier Applications in Commercial and Industrial Equipment.

Motorola - MRF325 - Transistor, NPN.

Max voltage: 33VCEO, 60VCBO.

Max current: 3.4Adc.

Dissipation: 82 watt.

Package: Case 316-01, style 1.

Operating temperature: -65 to 150 Deg C.

Note: Broadband RF.

Silicon. 30W, 225 to 400MHz.

Motorola - MRF209 - Transistor, NPN.

MRF209 is a silicon NPN transistor, Ucb = 36V, Ic = 4A, applications: VHF range, power transistor.

Vbr CBO: 36

Vbr CEO:18

Max. PD (W): 50

Min hFE: 5.0

Ic Max. (A): 4.0

@Ic (test) (A): 500m

Icbo Max. @Vcb Max. (A): 500u

Polarity: NPN

Oper. Temp (°C) Max.: 175

@VCE (V): 5.0

Pkg Style: StX-8

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 36 V

Maximum Collector-Emitter Voltage |Vce|: 18 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 200 °C

Forward Current Transfer Ratio (hFE), MIN: 5

Max voltage: 18VCEO, 30VCBO.

Package: SOE stud gold.

Note: RF Silicon.

Motorola - MRF208 - Transistor, NPN.

Max Voltage: 18VCEO, 30VCBO.

Max Current: 2Amp.

Dissipation: 10 watt.

Package: SOE Gold Stud.

Note: RF Silicon.

Motorola - MRF515 - Transistor, NPN.

Max voltage: 12.5V.

Dissipation: 0.12 watt in, 0.75 watt out.

Package: TO-39 (TO-205AD). 

Note: RF Class C amplifier.

UHF FM 470MHz.

Power gain: 8dB.

Note: Test Dotted. Used/Removed from equipment.

Motorola - MRF325 - Transistor, NPN.

Designed primarily for wide-band large-signal output amplifier stages in the 100 to 500MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 30 Watts Minimum Gain 8.5 dB Efficiency = 54% (Min) Built­In Matching Network for Broadband Operation Using Internal Matching Techniques 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR Gold Metallization for High Reliability Applications

Max Voltage: 33VCEO, 60VCBO.

Max Current: 3.4Adc.

Dissipation: 82 watt.

Package: Case 316-01, Style 1.

Operating Temperature: -65 to 150 Deg C.

Broadband RF. Silicon. 30W, 225 to 400MHz.

Guaranteed Performance @ 400MHz, 28Vdc /Output Power = 80 watts over225 to 400 MHz Band
Minimum Gain = 7.3 dB@ 400MHz

Note: Used/Removed from equipment and may have be soldered.

Motorola - MRF137 - Transistor, N-Channel RF.

Max voltage: 65V.

Dissipation: 30 watt.

Gain: 5 Amp.

Package: SOE flange, test dotted.

Note: N-Channel enhancement mode Mosfet, field effect transistors.

Guaranteed 28V, 150MHz. Power out: 30 watt. Test Dotted

Motorola - MRF966 - Transistor, N Channel MOSFET.

Max voltage: 10V.

Max current: 80mA.

Vbr DSS: 10

Vbr GSS : 8.0

Max. PD (W): 350m

Ciss Max. (F): 1.5p-

Id Max. (A); 80m

Idss Max. (A); 30m

Vp Max.: 4.5

Oper. Temp (°C) Max;     125

Pinout Equivalence Number: 4-64

Pkg Style: Macro-X

Surface Mounted Yes/No: YES

Package: SOT-123 (317-01 star).

Note: RF GaAs. Dual-Gate Tetrode.

UHF 1GHz.

Motorola - MRF911 Transistor, NPN.

This Silicon wideband NPN 7.5GHz transistor is suited for antenna and amplifier applications in the VHF and UHF frequency ranges.

Max voltage: 12V.

Max current: 40mA.

Dissipation: 400mW.

Package: Case 317-01 star.

Note: RF amplifier. UHF Microwave. Gain 5GHz 2.5dB.

Genuine Vintage Motorola MRF911 - New Old Stock

Motorola - MRF901 - Transistor, NPN silicon RF.

Max voltage: 15V.

Max current: 30mA.

Temperature: 200 deg C/W.

Application: Designed for high gain.

Low noise small-signal amplifiers.

Applications up to 2.5GHz.

Case 317-01.

Motorola - MRF627 - Transistors, RF.

Collector-base Capacitance-Max: 3.5 pF

Collector Current-Max (IC): 0.15 A

Collector-emitter Voltage-Max: 20.0 V

NPN Silicon Power.

Package style .205 4L PILL.

Motorola - MRF531 - Transistor, NPN.

Max voltage: 80VCEO, 100VCBO.

Max current: 50mA.

Dissipation: 2.5 watt.

Package: TO-39 gold leads.

Note: Bipolar UHF Microwave, 0.5GHz.

Motorola - MRF517 - Transistor, NPN.

The MRF517 from MOTOROLA manufacturer is a RF Transistors (BJT) with TRANS RF BIPO 2.5W 150MA. The MRF517 is RF Transistor NPN 20V 150mA 4GHz 2.5W Through Hole TO-39 Trans RF BJT NPN 20V 0.15A 3-Pin TO-39 RF Bipolar Transistors Comm/Bipolar Transistor.

Voltage: 20VCEO, 35VCBO.

Max current: 150mA.

Dissipation: 2.5 watt @ 25 Deg C.

Gain: 9dB ~ 10dB

Frequency: 4GHz

Package: TO-39. Gold Leads

New Old Stock

Application: Low noice broadband amplifier; predriver, driver, and output stages. Note: RF & Microwave, VHF/UHF. Silicon, Gpe = 10 dB (typ) @ 60 mA, 300 MHz. 3 GHz Current-Gain Bandwidth Product (min) @ 60mA. Broadband Noise Figure = 7.5 dB @ 50mA, 300 MHz.

Motorola - MRF327 - Transistor, NPN.

Guaranteed Performance @ 400 MHz, 28 Vdc Outpu t Power = 80 Watts over 225 to 400 MHz Band Minimum Gain = 7. 3 dB @ 400 MHz, Built–In Matching Network for Broad band Operation Using Double Match Technique, 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR

Max Voltage: 33VCEO, 60VCBO.

Max Current: 9Adc.

Dissipation: 250 watt.

Package: Case 316-01, style 1.

Operating Temperature: -65 to 150 Deg C.

Silicon RF power. 80W, 100 to 600MHz.

Motorola - MRF904 - Transistor, RF Small Signal.

Max Voltage: 15V.

Max Current: 30mA.

Dissipation: 200mw.

Gain: 4 GHz 15ma.

Package: TO-72-4 Gold Test Dotted (Case 20-03).

Motorola - 1N5819 - Diodes.

1Amp 40V Schottky.

Package: Axial Leads.

Vishay General Instruments - 1N5819 - Diode, schottky.

1Amp 40V,

Forward Voltage Max

VF:600mV, Forward Surge Current Max

Ifsm:25A,

Operating Temperature Range:-65C to +125C.

NSN 5961014127711

Package: axial leads.

ARCOTRONICS - R85IC3150CK02J - Metalized Polyester Capacitor

Rating: 0.15uF 250VDC 5% Radial

13.1mm tall x 7.1mm square

Note: ARCOTRONICS is now Kemet a Yageo Company

Package of 10