IGBT

IGBT. 600V 50 Amp. Module, no hardware. Used/Removed from equipment. Note: Marked 50DY-12H. Learn More

Transistor, IGBT. Insulated gate bipolar. Max voltage: 1200V. Max current: 200Amp. Package: Module insulated 2-element. P/N: CM200DY-24E. Application: High power switching use. AC drive inverters. Servo controls. Learn More

Matsushita / Panasonic - M57962L - 12-Ceramic SIP IGBT Gate Driver, New The Matushita / Panasonic M57962L Single In-line Hybrid IC for driving high speed devices designed to convert logic level control signals into optimal IGBT gate drive. Input signals are isolated from the IGBT drive using high speed optocouplers with 15,000V/ms. Mitsubishi IGBT drivers are designed to provide the pulse currents necessary for high performance switching applications and to maintain sufficient off bias to guarantee ruggedness. Hybrid IGBT drivers simplify gate drive design by minimizing the number of components required. The M57962L provides short-circuit protection. M57962L is a hybrid integrated circuit designed for driving n-channel IGBT modules in any gate amplifier application. This device operates as an isolation amplifier for these modules and provides the required electrical isolation between the input and output with an opto-coupler. Short circuit protection is provided by a built in desaturation detector. A fault signal is provided if the short circuit protection is activated. Status: Discontinued 12-SIP CERAMIC Max Operating Temperature: 60 °C Min Operating Temperature: -20 °C Min Supply Voltage: 14 V Peak Output Current: 5 Amps Operating Supply Voltage: 15 V Dimensions: Height - Seated (Max): 25 mm Made in Japan No Counterfeit – No China - No Delays – No Disappointments, Learn More

IXYS - IXGT30N60B - Transistor, IGBT, HiPer Fast. Status: Discontinued Transistor, IGBT, HiPerFast. Max voltage: 600V. Max current: 70Amp. Package: TO-268 SMD. Operating temperature: -55 to 150 Deg C. Application: PFC circuits, UPS, AC motor control, DC servo and robot drives and DC choppers. Note: Optimized for 10-25 KHz hard switching and up to 150KHZ resonant switching. Learn More

IR - G4BC30KD Transistor, IGBT.

Status: Discontinued

Insulated gate bipolar.

Max voltage: 600V.

Max current: 16Amp.

8-25 KHz

Package: TO-220.

Note: Ultra-fast soft recovery diode.

Genuine International Rectifier - New Old Stock - Difficult Transistor/IGBT to Find

Learn More

International Rectifier - IRG4BC20UD - Transistor, IGBT.

Max voltage: 600V.

Max current: 13Amp @ 25 Deg C, continuous.

Dissipation: 60W @ 25 Deg C, 24W @ 100 Deg C.

Package: TO-220.

Operating temperature: -55 to 150 Deg C.

Note: Ultra-Fast soft recovery.

Insulated gate bipolar transistor.

Learn More

Transistor, IGBT. Max voltage: 1200V. Max current: 150Amp. Package: Module M215 (2-pack). P/N: 2MBI150F-120. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Used/RFE/removed from equipment. Learn More

Transistor, IGBT. Insulated gate bipolar. Max voltage: 600V. Max current: 15Amp. Package: Module (6-pack) M604. P/N: 6MBI15F-060. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Learn More

Transistor, IGBT. Max voltage: 600V. Max current: 50Amp. Package: Module (2-pack) M218. P/N: 2MBI50F-060. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Note: New. No hardware. Learn More

Transistor, IGBT. Insulated gate bipolar. Max voltage: 600V. Max current: 300Amp. Package: Module (2-pack) M217. P/N: 2MBI300L-060. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Used/RFE/removed from equipment. Learn More

Transistor, IGBT. Max voltage: 600V. Max current: 30Amp. Package: Module. P/N: 7MBR30NE060. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Learn More

FUJI ELECTRIC - 6RI100G-160

Glass Passivation Chip - 6 in One-Package 

Diode. 100Amp 1600V.

Three phase 6 Pack.

Package: Module, No hardware.

Case: R606

Applications: Inverters, Battery Chargers, DC Motors, DC power Supplies

Learn More

Transistor, IGBT. Insulated gate bipolar. Max voltage: 1200V. Max current: 75Amp. Package: Module (2-pack) M216. P/N: 2MBI75F-120. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Learn More

Transistor, IGBT. Max voltage: 1200V. Max current: 75Amp. Package: Module (2-pack) M216. P/N: 2MBI75F-120. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Learn More

Transistor, IGBT. Insulated gate bipolar. Max voltage: 1000V. Max current: 50Amp. Package: Module M204 (2-pack). P/N: 2DI50Z-100. Application: High power switching. AC and DC motor controls. Uninterruptible power supplies. Learn More

OnSemiconductor FAIRCHILD - FGB30N6S2 - 600V SMPS II Series N-Channel IGBT TO-263/D2PAK

Status: Discontinued

Collector Emitter Breakdown Voltage: 600 V

Collector Emitter Saturation Voltage: 2 V

Collector Emitter Voltage (VCEO): 600 V

Current Rating: 45 A

Element Configuration: Single

Max Collector Current: 45 A

Operating Temperature: -55 °C to 150 °C

Max Power Dissipation: 167 W

Min Operating Temperature      

Power Dissipation: 167 W

Rise Time: 10 ns

Voltage Rating (DC): 600 V

Package (SMD TO-220/2 NO TAB)

BULK NEW

Learn More

Transistor, IGBT N Channel. Max voltage: 600Vces. Max current: 28 Amp @ 25 Deg C, 13 Amp @ 110 Deg C. Dissipation: 125 watt. Package: TO-263/D2PAK . P/N: FGB20N6S2. Note: Series: SMPS II. Operating temperature: -55 to 150 Deg C. Learn More

Transistor, IGBT N Channel. Max voltage: 1200V. Max current: 50Amp. Dissipation: 400 watt. Package: Module. P/N: MG50Q2YS40. Note: High speed. Isolated case, each with hardware. New. Learn More

Toshiba - MG50G1BL3 - Transistors, IGBT.

50Amp 600V.

Power module.

Learn More

IGBT. Voltage: 450VCEO, 600VCBO. Current: 500Amp. Package: Module, Used/Removed from equipment. No hardware. Appear as new. Note. Darlington. Learn More

Transistor, intelligent power module. Max voltage: 600V. Max current: 50Amp. Package: Flat base type insulated. P/N: PM50RSA060. Application: power switching applications.

Learn More

Transistor, intelligent power module. Max voltage: 1200V. Max current: 75Amp. Package: Flat base type insulated. P/N: PM75DSA120. Application: power switching applications. Learn More

Transistor, intelligent power module. Max voltage: 600V. Max current: 300Amp. Package: Flat base type insulated. P/N: PM300DSA060. Application: power switching applications. Learn More

Transistors. Intelligent power module. IGBT output. Max voltage: 600V. Max current: 100Amp. Package: Flat base type insulated. P/N: PM100CSA060. Application: power switching applications. Learn More