IGBT

Transistor, IGBT. Insulated gate bipolar. Max voltage: 600V. Max current: 75Amp. Package: Module (2-pack). P/N: 2MBI75N060. Application: Inverter for motor drive. AC and DC servo drive. Uninteruptible power supplies. Industrial machines, such as welding machines. More info: www.fujisemicon-elis.com

POWER ONE (Bel Power Solutions) - DGP20E48T5/15 - Power Supply / IGBT Module.

Status: Discontinued

DC/DC Converter.

Input Voltage to 48V.

Triple Output: 5V 2.5A, 15V 250mA, and -15V 250mA.

Power: 20 Watt. Isolated.

Voltage-Isolation: 700V.

Input: 36V min, 72V max.

Operating Temperature: -55 to 100 Deg C.

Mount: PCB.

Package: 7 Pin Module.

Approvals: UL, CSA, RU, TUV

Dimensions: 2.02" L x 2.02" W x 0.45" H (51.3mm x 51.3mm x 11.4mm).

DC-DC converter (ex. Board Mount type, Off-board type) to work properly, it usually needs a minimum load for each output. The minimum load is to ensure that the DC-DC converter can operate within the manufacturer's specification.

Note: Genuine Power One - Made in Mexico

FUJI ELECTRIC - 2MBI75J-120 - Transistor, IGBT. Power Module. Insulated Gate Bipolar.

Half Bridge IGBT Power Module

Max Voltage: 1200V.

Max Current: 75Amp.

V(BR)CES (V)=1.2kV

(BR)GES (V)=20

I(C) Abs.(A) Collector Current=75

Absolute Max. Power Diss. (W)=480

I(CES) Min. (A)=1.0m

I(GES) Max. (A)=15u

V(CE)sat Max.(V)=2.2

t(d)off Max. (s) Off time=950n

t(f) Max. (s) Fall time.=200n

Package: Module (2-Pack Internal).

Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines.

Genuine Fugi Electric- Factory New Old Stock

Made in Japan

ASTEC - AA05A-024L-150S - Power Supply.

Input: 9-36V.

Output: 15V 5 watt.

Isolated Output.

Shielded.

Mount: PCB.

Operating Temp: -25 C to 71 C

Dimensions: 2" x 1" x 0.4" High, 4 leads.

Listed: UL.

Note: Double marked QA13-030-18 and MAS4030-8.

TDK Lambda - L-35-0V-5 - Overvoltage Protector Module, IGBT.

Overvoltage Protection

Range: 6.6V =/-0.2V

Package: Module.

Made in Japan

Typical Applications: Overvoltage Protection used in expensive Voltage Regulated Power Supplies, Standard for 5VDc Power Supplies

NSN 6130-01-115-0946

Motorola - 1N1183R Diode. 40Amp 50V.

Package: DO-5 stud.

Note: Silicon.

Reverse polarity, anode case.

Maximum Ratings:

Average forward current IF(AV): 40 Amps

Maximum surge current IFSM: 800 Amps

Maximum I2t for fusing I2t: 2600 A2s

Maximum peak forward voltage VFM: 1.19 Volts

Maximum peak reverse current IRM: 10 µA

Maximum peak reverse current IRM:  2.0 mA

Maximum thermal resistance RθJC:  1.25°C/W

Maximum recommended operating frequency: 10 kHz

Storage temperature range Tstg:  -65 to +200°C

Operating junction temperature range TJ:  -65 to +200°C

Alternate: ECG5941

New Old Stock - Some oxidation on bulk packaged components (Cosmetic and does not affect operation).

FUJI ELECTRIC - 7MBR10NE120 -Transistor, IGBT.

Insulated Gate Bipolar.

Max Voltage: 1200V.

Max Current: 10Amp.

Package: Module.

Made in Japan

Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines.

Fuji Electric - 2MBI100N-120 - Transistor, IGBT. 

IGBT MODULE ( N Series ) N Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (4~5 Times Rated Current) Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply.

Status: Discontinued

Insulated gate Bipolar.

Max voltage: 1200V.

Max current: 100Amp.

Package: Module (2 in one-package). Two Circuits within a single IGBT.  

Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines.

Genuine Fuji Electric - New Old Stock - Bulk Packaged.

Alternate: Reliance Electric 602909-810AW for GV3000

Reliance uses them for their GV3000, and the part number they assign the module is: 602909-810AW. 

Made in Japan

FUJI ELECTRIC - 2MBI100J-120 - Transistor, IGBT.

Insulated Gate Bipolar.

Low Stauration 

Max Voltage: 1200V.

Max Current: 100Amp.

Temperature: 150C

Mount: Screw

Package: Dual Module, 2 in 1 Pack.

Applications: Industrial Machines, Uninterruptible Power Supplies, Welding Machines, Motor Drive, AC/DC Servo Drivces.

ERICSSON - PKG4410P - DC/DC  Convertor

The PKG units can be used as on-board distributed power modules, or serve as building blocks for more centralized power boards. The high efficiency makes it possible to operate over a wide temperature range without any extra heatsinks. At forced convection cooling >200 lfm (1 m/s), the PKG units can deliver full power without heatsinks up to +65°C ambient. With derated output power it can also operate in temperature controlled environments with non-forced convection cooling. By adding external heatsinking, the temperature range can be extended even further. Thanks to its peak power capability, the PKG series is ideal for applications where max power is only required during short durations e.g. in disc drives. The PKG series uses ceramic substrates with plated copper in order to achieve good thermal management, low voltage drops, and a high efficiency.

Input Voltage: 38-72VDC

Output Voltage: 3.3VDC @ 13.6Amps

45W Output.

Efficiency typ 86% (5 V) at full load

1500 V dc isolation voltage

Terminal Type: PCB

MTBF >200 years at +75 °C casetemperature

Rugged mechanical design andefficient thermal management, max+100 °C case temperature

EMI measured according toEN 55 022 and FCC part 15J

Dimensions: Size 74.7x63.5x11.0 mm (2.94x2.50x0.433 in.

Made in Sweden

Toshiba - MG25J1BS11 Transistor, IGBT.

Status: Discontinued

Max voltage: 600V (.6KV).

Max current: 25Amp.

Package: Module with Hardware.

Made in Japan

New Old Stock

MicroChip - Microsemi - APTM50HM38FG - 4 N-Channel Full-Bridge MOSFET Power Module

Trans MOSFET Array Dual N-CH 500V 90A 12-Pin Case SP6

MOSFET Type: FREDFET 7

Mount: Chassis Mount, Screw

Number of Contacts: 6

Continuous Drain Current: (ID) 90 A

Drain to Source Voltage: (Vdss) 500 V

Fall Time: 77 ns

Gate to Source Voltage (Vgs): 30 V

Input Capacitance: 1.2 nF

Operating Temperature: -40 C to 150 °C

Max Power Dissipation: 694 W

Number of Elements: 4

Power Dissipation: 694 W

Rds On Max: 45 mΩ

Rise Time: 35 ns

Turn-Off Delay Time: 87 ns

Turn-On Delay Time: 18 ns

Approximate Dimensions: See Attached Detailed Diagram

RoHS Compliant

Does not include mounting hardware.

Additional Information: https://www.microsemi.com/document-portal/doc_download/8189-aptm50hm38fg-datasheet

Applications: Welding converters, Switched Mode Power Supplies, Uninterruptible Power Supplies, Motor control

Note: Microsemi Corporation is a wholly owned subsidiary of Microchip Technology Inc.

Powerex CM1000HA-25H Power Transistor Module IGBT, 1000 Amp 1200V. Single module.

Collector Emitter Breakdown Voltage: 1.2 kV

Collector Emitter Voltage (VCEO): 3.6 V

Element Configuration: Single

Input: Standard

Input Capacitance: 200 nF

Max Collector Current: 1 kA

Max Power Dissipation: 5.8 kW

Compliance: RoHS Compliant     

Applications: AC motor control. Motion/Servo Control. Uninterruptible power supplies, Welding power supplies. Laser power supplies. Module Case, With Hardware.

Toshiba - MG300M1UK1 Transistor, IGBT.

Max voltage: 1000V (1KV).

Max current: 300Amp.

Package: Module.

Note: Used/Removed from equipment.

Toshiba - MG25N2CK1 Transistors, IGBT.

25Amp 1100V.

Darlington half bridge power module.

Hardware not included.

Powerex. - CM200DY-24E Transistor, IGBT.

Max Voltage: 1200V.

Max Current: 200Amp.

Package: Module insulated 2-element.

Application: High power switching use.

AC Drive Inverters.

Servo Controls.

Powerex. - KS621K40A41 - IGBT, Voltage: 850V, Current: 400Amp.

KS621K40A41
Darlington Independent Power Module - Viso 2.5kV(RMS),3-Stage
Powerex Power Semiconductors
Isolated Case (Y/N)=Yes
Circuits Per Package=1
V(BR)CEO (V)=850
V(BR)CBO (V)=1.0k
I(C) Abs.(A) Collector Current=400
Absolute Max. Power Diss. (W)=1.98k
R(thJC) (¡ãC/W)=63m
h(FE) Min. Static Current Gain=70
@I(C) (A) (Test Condition)=400
@VCE (test)=5.0
V(CE)sat Max.(V)=2.5
@I(C) (A) (Test Condition)=400
@I(B) (A) (Test Condition)=8.0
t(r) Max. (s) Rise time=3.0u
t(f) Max. (s) Fall time.=3.0u

Package: Module, NPN SI Power Transistor

Used/Removed from equipment.

Note. Darlington. No hardware.

NSN: 5961-01-350-7226

Made in Japan