Semiconductors
Semiconductor Components
At Electrical Surplus, we offer an extensive selection of electronic semiconductor devices for sale. Semiconductor components offer several advantages, including being shock-proof, having an almost unlimited lifespan, and requiring a low voltage to operate properly.
Our supply ranges from electronic transistors and timers to diodes and audio converters. Start shopping for your semiconductor components today to experience all of the advantages they have to offer. If the semiconductor you’re looking for is out of stock, you can request a part and we’ll get it to you as quickly as possible.
Find the semiconductor component you need in our selection below.
- FUJI ELECTRIC - 2MBI75N060 - Transistor, IGBT. P/N: 2MBI75N060.$142.50 As low as $109.25READY TO SHIP - ONLY 51 LEFT IN STOCK!
Transistor, IGBT. Insulated gate bipolar. Max voltage: 600V. Max current: 75Amp. Package: Module (2-pack). P/N: 2MBI75N060. Application: Inverter for motor drive. AC and DC servo drive. Uninteruptible power supplies. Industrial machines, such as welding machines. More info: www.fujisemicon-elis.com
Learn More - Advanced Power Technology - APT4525AN - N Channel Mosfet, 20Amp 450V.$4.99Transistors. N Channel Mosfet, 20Amp 450V 230Watt. Case: TO-3 steel.Manufactured by: Advanced Power Technology. Learn More
- Vishay Siliconix - SI9400DY - Si9400DY - Transistor, P Channel MOSFET. 20V. SOIC, 8 SMD$2.98 As low as $1.98Out of stock
Vishay Siliconix - SI9400DY - Si9400DY - Transistor, P Channel MOSFET.
Max voltage: 20V(D-S).
Continuous drain current: 2.5A @ 25 Deg C, 2.0Amp @ 70 Deg C.
Dissipation: 2.5 watt @ 25 Deg C, 1.6 watt @ 70 Deg C.
Package: SOIC 8 SMD.
Operating Temperature: -55 to 150 Deg C.
Learn More - Siliconix - VN88AF - Transistor, N Channel DS Mosfet.$9.00Transistor, N Channel DS Mosfet. Max voltage: 80V. Package: TO-202AA. Note: 4 Ohm. Learn More
- IXYS - IXTH20N60 - Transistor, N Channel MOSFET. 600V, 10A, TO-247ADIN STOCK - MORE THAN 100 READY TO SHIP!
IXYS - IXTH20N60 - Transistor, N Channel MOSFET. 600V, 10A, TO-247AD
Current Rating: 20 A
Drain to Source Breakdown Voltage: 600 V
Drain to Source Resistance: 350 mΩ
Drain to Source Voltage (Vdss): 600 V
Fall Time: 40 ns
Gate to Source Voltage (Vgs): 20 V
Input Capacitance: 4.5 nF
Operating Temperature: -55 °C to 150 °C
Max Power Dissipation: 300 W
Power Dissipation: 300 W
Rds On Max: 350 mΩ Resistance: 350 mΩ
Rise Time: 43 ns
Turn-Off Delay Time: 70 ns
Voltage Rating (DC): 600 V
RoHS Compliant
Package: TO-247AD.
Accessories: Fischer Elektronik - FK 243 MI 247 H, Fischer Elektronik - FK 243 MI 247 O, Fischer Elektronik - SK 145/25 STS-220, Fischer Elektronik - WLK 5
Learn More - IR - JANTXV2N6766 - Transistor, N-CH Mosfet. 200V, 30A, 150WSpecial Price $28.98 Regular Price $48.50
IR - JANTXV2N6766 - Transistor, N-CH Mosfet.
Max voltage: 200V.
Max current: 30Amp.
Dissipation: 150 watt.
Package: TO-3.
Derate >25 degC: -55 to 150 Deg C.
Military/Aerospace
- FUJI ELECTRIC - 2MBI200J-060 - Transistor, IGBT. P/N: 2MBI200J-060.$149.00Transistor, IGBT. Insulated gate bipolar. Max voltage: 600V. Max current: 200Amp. Package: Module (2-pack). P/N: 2MBI200J-060. Application: High power switching. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Learn More
- FUJI ELECTRIC - 6MBI25L-120 - Transistor, IGBT. P/N: 6MBI25L-120.Special Price $89.98 Regular Price $159.00FUJI ELECTRIC - 6MBI25L-120 - Transistor, IGBT. P/N: 6MBI25L-120. Transistor, IGBT. Insulated gate bipolar. Max voltage: 1200V. Max current: 25Amp. Package: Module (6-pack) M616. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Learn More
- FUJI ELECTRIC - 2MBI75J-120 - Transistor, IGBT Power Module. Insulated Gate Bipolar.
FUJI ELECTRIC - 2MBI75J-120 - Transistor, IGBT. Power Module. Insulated Gate Bipolar.
Half Bridge IGBT Power Module
Max Voltage: 1200V.
Max Current: 75Amp.
V(BR)CES (V)=1.2kV
(BR)GES (V)=20
I(C) Abs.(A) Collector Current=75
Absolute Max. Power Diss. (W)=480
I(CES) Min. (A)=1.0m
I(GES) Max. (A)=15u
V(CE)sat Max.(V)=2.2
t(d)off Max. (s) Off time=950n
t(f) Max. (s) Fall time.=200n
Package: Module (2-Pack Internal).
Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines.
Genuine Fugi Electric- Factory New Old Stock
Made in Japan
- Toshiba - MG300G1UL1 - Transistor, IGBT, NPN.$249.00Transistor, IGBT, NPN. Max voltage: 600V. Max current: 300Amp. Package: Module. P/N: MG300G1UL1. Note: Silicon, triple diffused. With hardware. Learn More
- Motorola - 2N7002LT1 - Transistor, N-Ch mosfet.
Motorola - 2N7002LT1 - Transistor, N-Channel MosFet.
Voltage: 60V.
Current: 115mA.
Dissipation: 625mW.
Package: SOT-23-3 SMD.
Package of 100.
High Discounted when purchased by the reel of 3,000 or quantity of 30X100.
Learn More - FUJI ELECTRIC - 7MBR10NE120 - Transistor, IGBT.1200V, 10A, ModuleSpecial Price $89.98 Regular Price $132.00
FUJI ELECTRIC - 7MBR10NE120 -Transistor, IGBT.
Insulated Gate Bipolar.
Max Voltage: 1200V.
Max Current: 10Amp.
Package: Module.
Made in Japan
Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines.
Learn More - FUJI ELECTRIC - 6MBI8L-120 - Transistor, IGBT. P/N: 6MBI8L-120.Special Price $129.95 Regular Price $159.00Transistor, IGBT. Insulated gate bipolar. Max voltage: 1200V. Max current: 8Amp. Package: Module (6-pack) M604. P/N: 6MBI8L-120. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. More info: www.fujielectric.com Learn More
- Fuji Electric - 2MBI100N-120 - Transistor, IGBT. 1200V, 100 AmpSpecial Price $169.98 Regular Price $185.00
Fuji Electric - 2MBI100N-120 - Transistor, IGBT.
IGBT MODULE ( N Series ) N Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (4~5 Times Rated Current) Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply.
Status: Discontinued
Insulated gate Bipolar.
Max voltage: 1200V.
Max current: 100Amp.
Package: Module (2 in one-package). Two Circuits within a single IGBT.
Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines.
Genuine Fuji Electric - New Old Stock - Bulk Packaged.
Alternate: Reliance Electric 602909-810AW for GV3000
Reliance uses them for their GV3000, and the part number they assign the module is: 602909-810AW.
Made in Japan
Learn More - FUJI ELECTRIC - 2MBI100J-120 - Transistor, IGBT. Dual 2 in 1 Pack.Special Price $128.98 Regular Price $165.00
FUJI ELECTRIC - 2MBI100J-120 - Transistor, IGBT.
Insulated Gate Bipolar.
Low Stauration
Max Voltage: 1200V.
Max Current: 100Amp.
Temperature: 150C
Mount: Screw
Package: Dual Module, 2 in 1 Pack.
Applications: Industrial Machines, Uninterruptible Power Supplies, Welding Machines, Motor Drive, AC/DC Servo Drivces.
Learn More - FUJI ELECTRIC - 2MBI150-20 - Transistor, IGBT. P/N: 2MBI150-20.Special Price $79.95 Regular Price $95.00Out of stockTransistor, IGBT. Insulated gate bipolar. Max voltage: 600V? Max current: 150Amp. Package: Module (2-pack). P/N: 2MBI150-20. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Label is torn off. We believe this is 150A 600V or 1200V? Part is being Sold As Is. Learn More
- Toshiba - MG25J1BS11 - Transistor, IGBT. 25A, 600V, N-Channel.
Toshiba - MG25J1BS11 Transistor, IGBT.
Status: Discontinued
Max voltage: 600V (.6KV).
Max current: 25Amp.
Package: Module with Hardware.
Made in Japan
New Old Stock
- MicroChip - Microsemi - APTM50HM38FG - 4 N-Channel Full-Bridge MOSFET Power Module, 4N-CH 500V, 90A
MicroChip - Microsemi - APTM50HM38FG - 4 N-Channel Full-Bridge MOSFET Power Module
Trans MOSFET Array Dual N-CH 500V 90A 12-Pin Case SP6
MOSFET Type: FREDFET 7
Mount: Chassis Mount, Screw
Number of Contacts: 6
Continuous Drain Current: (ID) 90 A
Drain to Source Voltage: (Vdss) 500 V
Fall Time: 77 ns
Gate to Source Voltage (Vgs): 30 V
Input Capacitance: 1.2 nF
Operating Temperature: -40 C to 150 °C
Max Power Dissipation: 694 W
Number of Elements: 4
Power Dissipation: 694 W
Rds On Max: 45 mΩ
Rise Time: 35 ns
Turn-Off Delay Time: 87 ns
Turn-On Delay Time: 18 ns
Approximate Dimensions: See Attached Detailed Diagram
RoHS Compliant
Does not include mounting hardware.
Additional Information: https://www.microsemi.com/document-portal/doc_download/8189-aptm50hm38fg-datasheet
Applications: Welding converters, Switched Mode Power Supplies, Uninterruptible Power Supplies, Motor control
Note: Microsemi Corporation is a wholly owned subsidiary of Microchip Technology Inc.
- Powerex - CM1000HA-24H - Power IGBT Transistor Module, Single 1000 Amp 1200V. New.Special Price $269.98 Regular Price $495.00READY TO SHIP - ONLY 3 LEFT IN STOCK!
Powerex CM1000HA-25H Power Transistor Module IGBT, 1000 Amp 1200V. Single module.
Collector Emitter Breakdown Voltage: 1.2 kV
Collector Emitter Voltage (VCEO): 3.6 V
Element Configuration: Single
Input: Standard
Input Capacitance: 200 nF
Max Collector Current: 1 kA
Max Power Dissipation: 5.8 kW
Compliance: RoHS Compliant
Applications: AC motor control. Motion/Servo Control. Uninterruptible power supplies, Welding power supplies. Laser power supplies. Module Case, With Hardware.
- Toshiba - MG300M1UK1 - Transistor, IGBT. Used.Special Price $68.98 Regular Price $85.00
Toshiba - MG300M1UK1 Transistor, IGBT.
Max voltage: 1000V (1KV).
Max current: 300Amp.
Package: Module.
Note: Used/Removed from equipment.
Learn More - Toshiba - MG25N2CK1 - Darlington Half Bridge Power ModuleSpecial Price $89.98 Regular Price $125.00
Toshiba - MG25N2CK1 Transistors, IGBT.
25Amp 1100V.
Darlington half bridge power module.
Hardware not included.
Learn More - SEC Samsung Electronics - IRF540 - Transistor, N Channel MOSFET. 100V, 28A, 85W, TO-220
SEC Samsung Electronics - IRF540 - Transistor, N Channel MOSFET. 100V, 28A, 85W, TO-220
The IRF540N is an N-Channel Mosfet. This mosfet can drive loads upto 23A and can support peak current upto 110A. It also has a threshold voltage of 4V, which means it can easily driven by low voltages like 5V. Hence it is mostly used with Arduino and other microcontrollers for logic switching. Speed control of motors and Light dimmers are also possible with this Mosfet since it has good switching characteristics.
Status: Discontinued
Max voltage: 100V.
Max current: 28Amp.
Dissipation: 85 watt.
Package: TO-220.
Operating temperature: -55 to 175 Deg C.
Note: Low gate charge StripFet.
RDS on: 0.55 Ohm.
Alternates: RFP30N06, IRFZ44, 2N3055, IRF3205
Learn More - Powerex. - CM200DY-24E - Transistor, IGBT. P/N: CM200DY-24E.Special Price $149.98 Regular Price $185.00
Powerex. - CM200DY-24E Transistor, IGBT.
Max Voltage: 1200V.
Max Current: 200Amp.
Package: Module insulated 2-element.
Application: High power switching use.
AC Drive Inverters.
Servo Controls.
Learn More - Powerex. - CM600HA-24E - IGBT. 600Amp 1200V. New.Special Price $195.98 Regular Price $219.50READY TO SHIP - ONLY 4 LEFT IN STOCK!Transistor, IGBT. 600Amp 1200V. Single module. Application: AC motor control. Motion/Servo control. Uninterruptible power supplies. Welding power supplies. Laser power supplies. Case: Module. With hardware. Learn More