Transistors

Transistors, NPN. Darlington. Case: TO-220/3 preformed leads. Learn More

SANYO - 2SC3038 -  Transistor, NPN.

Max Voltage: 400VCEO, 500VCBO.

Max Current: 4 Amp.

Dissipation: 40 watt.

Package: TO-220.

Application: For Switching Regulators.

Note: Silicon, Triple Ddiffused Planar.

Genuine Vintage Sanyo - New Old Stock - Rare

Alternate: NTE51, SK9452

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Transistor, NPN. Max voltage: 300VCEO, 600VCEX. Max current: 15 Amp. Dissipation: 175 watt. Package: TO-3 (TO-204AA) steel. P/N: 2N6546. Operating temperature: -65 to 200 Deg C. Note: Silicon. High Voltage. Learn More

HOUSE#61998 TO-3 STEEL NPN 117W modified with crimped leads on bottom two terminals - won't plug into socket, must be soldered to Learn More

Raytheon - 2N2270 - Transistor. Silicon NPN.

Status: Discontinued

5W 1A 60V.

High Speed Planar Power Transistor.

Mounted in a Hermetically Sealed Package

TO-5 Long Gold Leads.

NSN 5961-00-890-9768

Genuine Vintage Raytheon 

Alternate: Rockwell Collins 352-0430-000, National Semiconductor NS2915, ECG128, SK3024

Test Dotted

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Transistor, microwave 80GHz. Package: 4-pin Outline 83. P/N: NE70083. Note: Low noise Ku-K band GaAs MESFET. RED DOT =2SK353. Learn More

Motorola - MJ2500 Transistor, PNP.

Max voltage: 60V.

Max current: 10Amp.

Dissipation: 150 watt.

Package: TO-3 steel.

Application: GP amplifier.

Medium power complementary silicon darlington.

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Motorola - MJ13333 - Transistor, NPN

The MJ13333 transistor is designed for high voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applications such as; Switching Regulators, Inverters, Solenoid and Relay Drivers, Motor Controls, and Deflection Circuits.

Type Designator: MJ13333, Material: Si Switchmode, Polarity: NPN

Maximum Collector Power Dissipation (Pc): 175 W

Maximum Collector-Base Voltage |Vcb|: 700 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): -65 C to 200 °C

Collector Capacitance (Cc): 500 pF

Package: TO-3 Steel

Used/As Removed From Equipment

Difficult to find Vintage Genuine Motorola Power Transistor.  

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Motorola - JAN2N6365 Transistor, PNP. 5961-01-017-0381

Germanium 30v collector to base emitter open and 25 collector to emitter with base short circuited to emitter100.00 max coll current DC 150.0 max total power dissipation. TO-18 gold leads metal can, hermetically sealed.

Made in the USA.

Military NSN 5961-01-017-0381.

MRC      Parameter          Characteristics

ABBH     Inclosure Material            Metal

ABHP     Overall Length   0.170 inches minimum and 0.210 inches maximum

ABJT      Terminal Length               0.500 inches minimum and 0.750 inches maximum

ADAV    Overall Diameter              0.209 inches minimum and 0.230 inches maximum

ALAS      Internal Configuration    Junction contact

ALBA     Electrode Internally-Electrically Connected to Case           Collector

ASCQ     Internal Junction Configuration  PNP

AXGY     Mounting Method           Terminal

AYQS     Terminal Circle Diameter              0.100 inches nominal

CBBL      Features Provided           Hermetically sealed case

CTMZ    III Semiconductor Material           Germanium

CTQN    Voltage Rating in Volts per Characteristic               30.0 maximum breakdown voltage, collector-to-base, emitter open and 25.0 maximum breakdown voltage, collector-to-emitter, with base short-circuited to emitter

CTQX     Current Rating per Characteristic               100.00 milliamperes source cutoff current maximum

CTRD     Power Rating per Characteristic 150.0 milliwatts small-signal input power, common-collector preset

TEST       Test Data Document       81349-MIL-S-19500 specification (includes engineering type bulletins, brochures, etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type data on certain environmental and performance requirements and test conditions that are shown as "typical", "average", "nominal", etc.).

TTQY      Terminal Type and Quantity        3 uninsulated wire lead

ZZZK      Specification/Standard Data        81349-MIL-S-19500/471 government specification

 

 

 

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Transistor, PNP. Voltage: 80V. Current: 10Amp. Dissipation: 150 watt. Operating temperature: -65 to 200 Deg C. Package: TO-3. Note: Silicon. Military NSN 5961-00-1364-4162. Learn More

Motorola - JANTX2N6058 Transistor, NPN Darlington.

Categories          Discrete Semiconductor Products            

Transistors - Bipolar (BJT) - Single             

Manufacturer    Microsemi Corporation

Series    Military, MIL-PRF-19500/502      

Packaging            Bulk      

Part Status          Active  

Transistor Type NPN - Darlington             

Current - Collector (Ic) (Max)      12A       

Voltage - Collector Emitter Breakdown (Max)      80V       

Vce Saturation (Max) @ Ib, Ic      3V @ 120mA, 12A           

Current - Collector Cutoff (Max) 1mA      

DC Current Gain (hFE) (Min) @ Ic, Vce     1000 @ 6A, 3V 

Power - Max       150W    

Frequency - Transition   -             

Operating Temperature -55°C ~ 175°C (TJ)           

Mounting Type Through Hole    

Package / Case  TO-204AA, TO-3               

Supplier Device Package               TO-3

Military NSN 5961-010689520.

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Motorola - JAN2N3442 Transistor, NPN.

Max voltage: 140VCEO, 160VCBO.

Max current: 10 Amp.

Dissipation: 117 watt.

Package: TO-3.

Operating temperature: -65 to 200 Deg C.

Note: Silicon.

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Transistor, PNP. Messenger output. CB-Radio. House numbered: 2002. Package: TO-3. Note: Germanium. Learn More

Transistor, PNP. Max voltage: 80V. Max current: 1Amp. Dissipation: 25 watt. Package: TO-66. P/N: 2N4900. Learn More

Linear Integrated Systems - LS313 Transistor, NPN Dual.

Max voltage: 45V.

Max current: 10ma.

Dissipation: 250mW each.

Package: TO-78 Gold Leads (TO-99-6).

Very High Gain >200. Operating junction temperature 150 Deg C.

NSN: 5961-01-317-1936

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KEC (Korea Electronics Corp.) - KN2907 Transistor, PNP.

Max voltage: 40VCEO, 60VCBO.

Max current: 600mA.

Dissipation: 625mW.

Package: TO-92.

Operating Temperature: -55 to 150 Deg C.

Note: Epitaxial Planar.

Genuine KEC - New Old Stock

Alternates: 2N2907, MPS2907, NTE159

Package of 10.

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IXYS - IXTH20N60 - Transistor, N Channel MOSFET. 600V, 10A, TO-247AD

Current Rating: 20 A

Drain to Source Breakdown Voltage: 600 V

Drain to Source Resistance: 350 mΩ

Drain to Source Voltage (Vdss): 600 V

Fall Time: 40 ns

Gate to Source Voltage (Vgs): 20 V

Input Capacitance: 4.5 nF

Operating Temperature: -55 °C to 150 °C

Max Power Dissipation: 300 W

Power Dissipation: 300 W

Rds On Max: 350 mΩ  Resistance: 350 mΩ

Rise Time: 43 ns

Turn-Off Delay Time: 70 ns

Voltage Rating (DC): 600 V

RoHS     Compliant

Package: TO-247AD. 

Accessories: Fischer Elektronik - FK 243 MI 247 H, Fischer Elektronik - FK 243 MI 247 O, Fischer Elektronik - SK 145/25 STS-220, Fischer Elektronik - WLK 5

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IR - JANTXV2N6766 - Transistor, N-CH Mosfet.

Max voltage: 200V.

Max current: 30Amp.

Dissipation: 150 watt.

Package: TO-3.

Derate >25 degC: -55 to 150 Deg C.

Military/Aerospace 

 

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General Electric - D44R2 - High Voltage Power Transistor, NPN.

Type Designator: D44R2

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 31 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Collector-Emitter Voltage |Vce|: 250 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 20 MHz

Max Frequency: 40 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 75

Package: TO-220 Red power tab, Pkg.229, Gold Leads. 

Genuine Vintage General Electric - New Old Stock

Made in USA

Alternate/Replaces: ECG198, SK3219, D44R1

NSN 5961-01-005-8801

 

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Transistor, IGBT. Insulated gate bipolar. Max voltage: 600V. Max current: 200Amp. Package: Module (2-pack). P/N: 2MBI200J-060. Application: High power switching. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Learn More

FUJI ELECTRIC - 6MBI25L-120 - Transistor, IGBT. P/N: 6MBI25L-120. Transistor, IGBT. Insulated gate bipolar. Max voltage: 1200V. Max current: 25Amp. Package: Module (6-pack) M616. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Learn More

FUJI ELECTRIC - 2MBI75J-120 - Transistor, IGBT. Power Module. Insulated Gate Bipolar.

Half Bridge IGBT Power Module

Max Voltage: 1200V.

Max Current: 75Amp.

V(BR)CES (V)=1.2kV

(BR)GES (V)=20

I(C) Abs.(A) Collector Current=75

Absolute Max. Power Diss. (W)=480

I(CES) Min. (A)=1.0m

I(GES) Max. (A)=15u

V(CE)sat Max.(V)=2.2

t(d)off Max. (s) Off time=950n

t(f) Max. (s) Fall time.=200n

Package: Module (2-Pack Internal).

Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines.

Genuine Fugi Electric- Factory New Old Stock

Made in Japan

 

 

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ONSEMI FAIRCHILD - NDS9948 - Transistor, P Channel FET, Dual.

Drain Source: -60V.

Drain Current: -2.3Amp @ 25 Deg, 1.8Amp @ 70 Deg.

Dissipation: Single operation: 1.6 watt.

Dual Operation: 2 watt.

Package: 8 SOIC SMD.

From: Manufacture new T/R. P/N: NDS9948.

Operating Temperature: -55 to 150 Deg C. 

Note: Enhancement mode.

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Fairchild - 2N3011 Transistor, NPN.

Ultra High Spped Logic Switch

Max voltage: 12V.

Max current: 0.2Amp.

Dissipation: 360mW.

Package: TO-18 hermetically sealed. Gold Leads

Note: Bipolar. Cross NTE123A.

NSN: 5961-00-075-8063 

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