Transistors

Transistor, N CH TMOS Mosfet. Max voltage: 200V. Max current: 8 Amp cont. Dissipation: 75 watt. Package: TO-220AB. P/N: MTP8N20. Note: RDS on: 0.4 Ohm 4Amp. Learn More

Transistor, N CH TMOS Mosfet. Max voltage: 850V. Max current: 2 Amp cont. Dissipation: 75 watt. Package: TO-220AB. P/N: MTP2N85. Note: RDS on: 8 Ohm 1Amp. Military NSN 5961-01-362-8372. High Voltage. Learn More

Transistor, NPN. Voltage: 100V. Current: 8Amp. Dissipation: 75 watt. Package: TO-127. Note: Silicon darlington. Learn More

Motorola - MJE1103 Transistor, PNP.

Voltage: -80V.

Current: -5 Amp.

Dissipation: 70 watt.

Operating temperature: -55 to 150 Deg C.

Package: TO-127.

Note: Silicon darlington.

Removed - PULLS

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Transistor, NPN. Max voltage: 200V. Max current: 15Amp. Dissipation: 175 Watt. Package: TO-3. P/N: MJ11020. Note: Silicon darlington. Learn More

Motorola - MJ11016 Transistor, NPN.

Max voltage: 120V.

Max current: 30Amp.

Dissipation: 200 Watt.

Package: TO-3.

Note: Silicon darlington.

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Transistor, NPN. Max voltage: 10VCEO 20VCBO. Max current: 100mA. Dissipation: 322mW. Package: SOT-23 SMD. P/N: MMBR951L. Note: Silicon, low noise, high frequency. Learn More

Transistor, N CH TMOS Fet. Max voltage: 60V. Max current: 12 Amp. Dissipation: 40 watt. Package: TO-220AB. P/N: MTP3055EL. Operating temperature: -65 to 150 Deg C. Note: Enhancement mode. RDS on: 0.15 Ohm. Learn More

Motorola - MRF966 - Transistor, N Channel MOSFET.

Max voltage: 10V.

Max current: 80mA.

Vbr DSS: 10

Vbr GSS : 8.0

Max. PD (W): 350m

Ciss Max. (F): 1.5p-

Id Max. (A); 80m

Idss Max. (A); 30m

Vp Max.: 4.5

Oper. Temp (°C) Max;     125

Pinout Equivalence Number: 4-64

Pkg Style: Macro-X

Surface Mounted Yes/No: YES

Package: SOT-123 (317-01 star).

Note: RF GaAs. Dual-Gate Tetrode.

UHF 1GHz.

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Motorola - MRF911 Transistor, NPN.

This Silicon wideband NPN 7.5GHz transistor is suited for antenna and amplifier applications in the VHF and UHF frequency ranges.

Max voltage: 12V.

Max current: 40mA.

Dissipation: 400mW.

Package: Case 317-01 star.

Note: RF amplifier. UHF Microwave. Gain 5GHz 2.5dB.

Genuine Vintage Motorola MRF911 - New Old Stock

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Motorola - MRF901 - Transistor, NPN silicon RF.

Max voltage: 15V.

Max current: 30mA.

Temperature: 200 deg C/W.

Application: Designed for high gain.

Low noise small-signal amplifiers.

Applications up to 2.5GHz.

Case 317-01.

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Transistor, PNP. Max voltage: 200VCEO, 300VCBO. Max current: 500mA. Dissipation: 225mW. Package: SOT-23 SMD molded plastic. P/N: MMBTA92L. Operating temperature: -55 to 150 Deg C. Package of approximately 800 Pcs, bulk. Note: Silicon. High Voltage. Learn More

Transistor, NPN. Max voltage: 200V. Max current: 500mA. Dissipation: 225mW. Package: SOT-23 SMD molded plastic. P/N: MMBTA43. Operating temperature: -55 to 150 Deg C. Package of approximately 800 Pcs, bulk. Note: Silicon. High Voltage. Rohs compliant. Learn More

Transistor, NPN. Max voltage: 30V. Max current: 300mA. Dissipation: 300mW. Package: SOT-23 SMD molded plastic. P/N: MMBTA13. Operating temperature: -55 to 150 Deg C. Package of approximately 500 Pcs, bulk. Note: Epitaxial planar darlington. Learn More

Transistor, PNP. Max voltage: 150VCEO, 160VCBO. Max current: 500mA. Dissipation: 225mW. Package: SOT-23 SMD molded plastic. P/N: MMBT5401L. Operating temperature: -55 to 150 Deg C. Package of approximately 1.4K Pcs, bulk. Note: Silicon. High Voltage. Learn More

Motorola - MJ15025 Transistor, PNP.

Voltage: 250VCEO, 400VCBO.

Current. 16Amp.

Dissipation: 250 watt.

Operating temperature: - 65 to 200 Deg C.

Package: TO-3.

Note: Silicon.

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Transistor, PNP. Max voltage: 120V. Max current: 50Amp. Dissipation: 300 Watt. Package: TO-3. P/N: MJ11033. Note: Silicon darlington. Learn More

Transistor, NPN. Max voltage: 120V. Max current: 50Amp. Dissipation: 300 Watt. Package: TO-3. P/N: MJ11032. Note: Silicon darlington. Learn More

Transistor, N Channel MOSFET. Max voltage: 950V. Max current: 1 Amp. Dissipation: 75 watt. Package: TO-3 steel. P/N: MTM1N95. Operating temperature: -65 to 150 Deg C. Note: Enhancement mode silicon gate. TMOS power. RDS on: 10 Ohm @ 0.5 Amp. Learn More

Transistor, N Channel MOSFET. Max voltage: 350V. Max current: 15 Amp. Dissipation: 250 watt. Package: TO-3 steel. P/N: MTM15N35. Operating temperature: -65 to 150 Deg C. Note: Enhancement mode silicon gate. TMOS power. RDS on: 0.3 Ohm @ 7.5 Amp. Learn More

Transistor, NPN. Max voltage: 325VCEO, 700VCES. Max current: 10Amp. Dissipation: 125 Watt. Package: TO-3. P/N: MJ9000. Operating temperature: -55 to 150 Deg C. Note: Silicon. High Voltage. Learn More

Motorola - MRF531 - Transistor, NPN.

Max voltage: 80VCEO, 100VCBO.

Max current: 50mA.

Dissipation: 2.5 watt.

Package: TO-39 gold leads.

Note: Bipolar UHF Microwave, 0.5GHz.

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Transistor, NPN. Max voltage: 450VCEO, 850VCBO. Max current: 8Amp. Dissipation: 125 watt. Package: TO-218. P/N: MJH16008. Operating temperature: -55 to 150 Deg C. Note: Silicon. Switchmode series. High Voltage. Learn More

Transistor, N Channel MOSFET. Max voltage: 50V. Max current: 35 Amp. Dissipation: 125 watt. Package: TO-3 steel. P/N: MTM35N05. Operating temperature: -65 to 150 Deg C. Note: Enhancement mode silicon gate. TMOS power. RDS on: 0.055 Ohm @ 17.5 Amp. Learn More