Transistors

Motorola - MM5007 - Transistor, PNP.

Max voltage: 100VCEO, 120VCBO.

Max current: 2Amp.

Dissipation: 80 watt.

Package: TO-39. 

Operating temperature: -65 to 200 Deg C.

Application: High voltage audio driver amplifier and GP switching and oscillator applications.

Note: Silicon.

Learn More

Motorola - MC3386P - IC. Transistor array, 14 Pin DIP, New. The Motorola MC3386P is a legacy 14-pin DIP, silicon monolithic transistor array featuring one differentially connected pair and three isolated transistors. Designed for low-power general-purpose consumer and industrial applications, it offers guaranteed base-emitter voltage matching with an operating current range from 10μ"A" to 10 "mA." Key Features & Technical Specifications Manufacturer: Genuine Motorola Semiconductor Package: 14-pin DIP (Dual In-line Package) Configuration: One differential pair + three isolated transistors Type: General-purpose transistor array Current Range: 10μ"A" 10"mA" . Matching: Guaranteed base-emitter voltage matching Common Applications General-purpose analog signal processing Low-power consumer electronics Industrial control circuits Learn More

Motorola - JANTX2N2219A  Transistor, NPN.

Max voltage: 40VCEO, 75VCBO.

Max current: 800mA.

Dissipation: 800mW.

Package: TO-5.

Operating temperature: 175 Deg C.

Application: High speed switching.

Note: Silicon planar epitaxial.

Military type JANTX.

Learn More

Transistor, PNP. Voltage: -40VCEO, 60VCBO. Current: -0.6Amp. Dissipation: 1.8 watt. Operating temperature: -65 to 200 Deg C. Package: TO-18 (TO206AA) metal. Note: Silicon planar epitaxial. Switching. Military JANS. Learn More

Transistor. Manufactured by Motorola for Gould. Package: TO-202. No other information available. Learn More

Transistor, NPN. Voltage: 50VCEO, 60VCBO. Current: 7 Amp. Dissipation: 40 watt. Operating temperature: -65 to 150 Deg C. Package: TO-220AB, tarnishing. Note: Silicon. Learn More

Transistor, PNP. Max voltage: 80V. Max current: 12 Amp. Dissipation: 150 watt. Package: TO-3 steel. P/N: JANTXV2N6051. Operating temperature: -55 to 175 Deg C. Note: Silicon darlington. Military aerospace. Learn More

Transistor, PNP. Max voltage: 80VCEO, 100VCBO. Max current: 25Amp. Dissipation: 200 Watt. Package: TO-3 steel. P/N: 2N6436. Note: Silicon. Learn More

Transistor, NPN. Voltage: 60V. Current: 10 Amp. Dissipation: 65 watt. Operating temperature: 065 to 150 Deg C. Package: TO-220. Note: Silicon darlington. Learn More

Transistor, N Channel MOSFET. Max voltage: 450V. Max current: 4.5Amp. Dissipation: 75 watt. Package: TO-220 gold leads. P/N: IRF831. Operating temperature: -55 to 150 Deg C. Note: High Voltage. Learn More

Transistor, NPN. Package: TO-18 gold leads. Note: Silicon. Cross: NTE123A. Learn More

Transistor, NPN. Max voltage: 45VCEO 50VCBO. Max current: 100mA. Dissipation: 330mW. Package: SMD SOT-23. P/N: BC847B. Application: GP. Note: Silicon. Package of 20. Learn More

Motorola - IRF840 Transistor, NPN Channel FET.

Supplier Package: TO-220-3, MOSFET

Maximum Drain Source Voltage : 500 V

Maximum Continuous Drain Current: 8 A

Maximum Gate Source Voltage: ±20V

Maximum Power Dissipation: 44 W

Peak Forward Voltage: 500VDC

Output Power: 44W

Peak Non-Repetitive Surge Current: 32A

Peak Reverse Current: 10uA

Channel Mode  N-Channel Enhancement

Peak Reverse Recovery Time: 125ns

Peak Reverse Repetitive Voltage: 500VDC

Maximum Drain Source Resistance: 0.8 Ohms@10V

Maximum Continuous Forward Current: 8A

Typical Fall Time: 75ns, Typical Rise Time: 65ns

Typical Gate Charge @ Vgs: 41nC@10V

Typical Input Capacitance @ Vds: 1400pf@25V

Typical Turn-Off Delay Time: 125ns, Typical Turn-On Delay Time: 22ns

Operating Temperature :  -55°C to 150 C

Dimensions: Width 4.7mm, Height 8.76mm, Length:10.54mm

Note: Used, 1/4" cut leads.

Learn More

Transistor, PNP. Max voltage: 65V. Max current: 100mAdc. Dissipation: 300mW. Package: SOT23 SMD Silicon. P/N: BC856BLT1. From: Manufactures T/R. Package of 20. Learn More

Transistor, PNP. Max voltage: 80V. Max current: 10 Amp. Dissipation: 65 watt. Package: TO-220. P/N: 2N6668. Operating temperature: -65 to 150 Deg C. Note: Silicon darlington. Learn More

Transistor, PNP. Max voltage: 80V. Max current: 1Amp. Dissipation: 4 watt. Package: TO-39. P/N: JAN2N4033. Note: Silicon planar. Military NSN 5961-01-047-9231. Cross: TEK 151-0389-00. Learn More

SILICON PNP 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC 500.00 MAXIMUM COLLECTOR CURRENT, DC NEW MIL ST5M1599-001 TO-39 GOLD MIL LABELED SRF2569H (CROSS 2N5583) Learn More

Transistor, PNP. Voltage: -40VCEO, 60VCBO. Current: -0.6Amp. Dissipation: 1.8 watt. Operating temperature: -65 to 200 Deg C. Package: TO-18 (TO206AA) metal. Note: Silicon planar epitaxial. Switching. Military JAN type.

Learn More

Transistor, PNP. Max voltage: 20VCEO, 25VCBO. Max current: 2mA. Dissipation: 75mW. Package: TO-72-4 gold leads. P/N: 2N700. Note: Germanium. Learn More

Motorola - JANTX2N2907A Transistor, PNP.

Voltage: -40VCEO, 60VCBO.

Current: -0.6Amp.

Dissipation: 1.8 watt.

Operating temperature: -65 to 200 Deg C.

Package: TO-18 cut 1/4" leads (TO206AA) metal.

Note: Silicon planar epitaxial.

Switching.

Military JANTX.

Learn More

Motorola - D45H5 - Transistor, PNP. Max Voltage: 45V. Max Current: 10Amp. Dissipation: 50 watt. Package: TO-220AB. Operating Temperature: -55 to 150 Deg C. Learn More

Transistor, NPN. Max current: 2Amp. Package: TO-202 with a color coded date code. Note: Silicon darlington. Learn More

Transistor, NPN. Max voltage: 700VCEO, 1500VCEX. Max current: 2.5 Amp. Dissipation: 36 watt. Package: TO-3 steel. P/N: BU205. Operating temperature: -65 to 115 Deg C. Learn More

MYSTERY TRANSISTORS TO-220 NEW Learn More