Transistors

Transistor, NPN. Max voltage: 100V. Max current: 0.5Amp. Dissipation: 1 watt. Package: TO-39. P/N: 2N657. Operating temperature: -65 to 200 Deg C. Note: Silicon planar. Learn More

Ge PNP TRANSISTOR TO-66/2 GOLD LEADS Learn More

Ge PNP Lo-Pwr BJT TO-72 GOLD Learn More

GE PNP Transistors TO-39 GOLD. Learn More

GE PNP TRANSISTORS TO-39 GOLD NEW IND PKG'D Learn More

GE PNP TRANSISTORS TO-3 ALUM Learn More

Transistor, PNP. Package: TO-3 steel, gold leads. New. Note: Germanium. Cross NTE179. Learn More

GE PNP TRANSISTORS TO-3 ALUM Learn More

GE PNP TRANSISTORS TO-3 ALUM Learn More

Transistor, PNP. Package: TO-39 gold leads. Note: Silicon. Cross NTE129. Learn More

Transistor, NPN. Package: TO-18 gold leads. Note: Silicon. Cross: NTE123A. Learn More

Transistor, NPN. Voltage: 80V. Current: 10Amp. Dissipation: 100 watt. Operating temperature: -65 to 200 Deg C. Package: TO-3. Note: Silicon darlington. Learn More

Transistor, PNP. Max voltage: 80V. Max current: 10Amp. Dissipation: 50 watt. Package: TO-220. P/N: D45H11. Note: Silicon. Learn More

Transistor, PNP. Voltage: 35VCEO, 50VEBO. Power: 0.6 Amp. Package: TO-5 long gold leads. P/N: JAN2N1132. Note: silicon. Military. Learn More

Motorola - IRF730 - Transistor, N Channel MOSFET.

Max Voltage: 400V.

Gain: 5.5 Amp.

Package: TO-220.

Note: 1000 Ohm.

Package: TO-220

Genuine Motorola - New Old Stock

 

 

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Transistor, NPN. Voltage: 15VCEO, 30VCBO. Current: 50mA. Dissipation: 200mW. Package: TO-72-4. Note: Silicon bipolar. UHF-Microwave. Learn More

Transistor, NPN. Max voltage: 80V. Max current: 50Amp. Dissipation: 300 Watt. Package: TO-3 steel, Used/Removed from equipment. P/N: JANTX2N5686. Operating temperature: -65 to 200 Deg C. Note: Silicon. Military NSN 5961-00-359-6177. Learn More

Transistor, PNP. Max voltage: 80V. Max current: 50Amp. Dissipation: 300 Watt. Package: TO-3 steel, Used/Removed from equipment. P/N: JANTX2N5684. Operating temperature: -65 to 200 Deg C. Note: Silicon. Military NSN 5961-01-083-5270. Learn More

Motorola - J309 Transistor.

Type Designator: J309

Type of Transistor: JFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.625 W

Maximum Drain-Source Voltage |Vds|: 25 V

Maximum Gate-Source Voltage |Vgs|: 4 V

Maximum Drain Current |Id|: 0.03 A

Maximum Junction Temperature (Tj): 150 °C

Package: TO-92, Gold Leads

Max current: 10mA. 

Applications: UHF/VHF Amplifier. Oscillators. Mixers..

Cross Reference potential substitutions: (Confirm specifications for your application) 

BF246B, J105, J106, J107, J309, PF5103,  PN4091, PN4861, TIS73

 

 

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Transistor, UJT. Package: TO-92 gold leads. Note: Silicon. Cross NTE6400A. Learn More

Motorola - JAN2N1613 Transistor, NPN.

Voltage: 50V.

Current: 0.5 Amp.

Dissipation: 0.8 watt.

Package: TO-39.

Note: Silicon.

NSN 5961-00-025-5899

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Bipolar PNP Device in a Hermetically sealed TO18 Metal Package 5960-00-814-5955 TO-18 GOLD NEW MIL Learn More

Transistor, NPN. Max voltage: 60VCEO, 120VCBO. Max current: 150mA. Package: TO-39 hemetically sealed, gold leads. P/N: 2N699. Note: Small signal. Learn More

Transistor, PNP. Voltage: 60V. Current: 300mA. Dissipation: 400mA. Package: TO-39. P/N: JAN2N1008B. Note: Alloy junction germanium. Military NSN 5961-00-988-9795. Learn More