Transistors

Transistor, NPN. Voltage: 80VCEO, 100VCB. Current: 10Amp. Dissipation: 150 watt. Operating temperature: -65 to 200 Deg C. Package: TO-3. Note: Silicon. Military NSN 5961-00-235-3226. Learn More

Transistor, PNP. Voltage: 60V. Current: 300mA. Dissipation: 400mA. Package: TO-39. P/N: JAN2N1008B. Note: Alloy junction germanium. Military NSN 5961-00-988-9795. Learn More

Transistor, NPN. Max voltage: 15VCEO, 40VCBO. Max current: 200mA. Dissipation: 360mW. Package: TO-18. P/N: JANTX2N2369. Operating temperature: -65 to 200 Deg C. Note: Silicon. Learn More

Transistor, PNP. Max voltage: 80V. Max current: 25Amp. Dissipation: 200 Watt. Package: TO-3 aluminum. P/N: HEPS7001. Note: Silicon. Cross NTE180. Learn More

Transistor, PNP. Max voltage: 140V. Max current: 1Amp. Dissipation: 1 Watt. Package: TO-39. P/N: JANTX2N3635. Operating temperature 200 Deg C. Note: Silicon. Switching amplifier. Learn More

Transistor, NPN. Max voltage: 60VCEO, 100VCBO. Max current: 500mAdc. Dissipation: 600mW. Package: TO-78-6 metal. P/N: JANTX2N2060. Operating temperature: -65 to 200 Deg C. Note: Unitized Dual. Silicon. Learn More

Motorola - 2N3439 - Transistor, NPN.

Max voltage: 350VCEO, 450VCBO.

Max current: 1Amp.

Dissipation: 10 Watt at 25 Deg C.

Operating temperature: 200 Deg C.

Note: Silicon epitaxial planar.

Package: TO-39

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Motorola - 2N2484 Transistor, NPN.

Status: Discontinued

Max voltage: 60V.

Max current: 50mAdc.

Dissipation: 500mW.

Package: TO-18 gold leads.

Collector-base Capacitance-Max : 6.0 pF

Collector Current-Max (IC): 0.05 A

Collector-emitter Voltage-Max: 60.0 V

DC Current Gain-Min (hFE): 250.0

Operating Temperature -Max: 200.0 C

Package Body Material: METAL, Round Can

Polarity/Channel Type: NPN

Power Dissipation Ambient-Max: 1.2 W

Transition Frequency-Nom (fT): 100.0 MHz

VCEsat-Max: 0.35 V

Additional Feature: LOW NOISE

Note: Silicon.

Alternate (Form/Fit/Function): JAN2N2484, 2N2484, 2N2484, JANTXV2N2484     

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Transistor, PNP. Max voltage: 25VCEO, 30VCBO. Max current: 50mA. Dissipation: 625mW. Package: TO-92 plastic (TO-226AA). P/N: 2N5208. Operating temperature: -55 to 150 Deg C. Note: Silicon. Learn More

Transistor, N Channel FET. Max voltage: 40V. Max current: 50mA. Dissipation: 1.8 watt. Package: TO-18. P/N: 2N4857. Note: Silicon. RDS on: 40 Ohm. Learn More

Transistor, PNP. Max voltage: 80V. Max current: 1 Amp. Dissipation: 1.25 watt. Package: TO-39 gold leads. P/N: 2N4405. Note: Silicon epitaxial planar. Learn More

Transistor, PNP. Max voltage: 80V. Max current: 1Amp. Dissipation: 4 watt. Package: TO-39. P/N: 2N4033. Note: Silicon planar. Cross: TEK 151-0389-00. Learn More

Transistor, PNP. Max voltage: 60V. Max current: 50mA. Dissipation: 360mW (1.2W at 25 Deg C). Package: TO-72 metal. P/N: 2N3798. Operating temperature: -65 to 200 Deg C. Learn More

Transistor, PNP. Max voltage: 120V. Max current: 100mA. Dissipation: 400mW TA=25 DegC, 1.2 watt TC=25DegC. Package: TO-18. New. P/N: 2N3497. Note: Cross NTE288. Learn More

Transistor, UJT. Unijunction. Repetitive Peak Forward Current, Ifrm:1.5A, Peak Emitter Current:1�A, Valley Current, Iv:7mA, Power Dissipation, Pd:300mW, Operating Temperature Range:-65�C to +125�C, Emitter Current:50mA, TO-92 test Dots, RoHS No Learn More

Motorola 2N4352 Transistor, P-Channel Enhancement Mode MOS FET Amplifier/Switch TO-72 GOLD NEW 

Rating Symbol Value Unit Drain-Source Voltage vds 25 Vdc

Drain-Gate Voltage Vdg: 30 Vdc

Gate-Source Voltage Vgs: ±30 Vdc

Gate Current "G: 30 mAdc

CASE 20-03: STYLE 2, TO-72 (TO-206AF)

MOS FET

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Motorola - 2N3501 Transistor, NPN.

Status: Discontinued

Voltage: 150V.

Current: 300mAdc.

Dissipation: 5 watt.

Operating temperature: -55 to 200 Deg C.

Package: TO-39.

Note: Silicon.

 

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Motorola - 2N2905 Transistor, PNP.

Max voltage: 60V.

Max current: 600mA.

Dissipation: 600mW.

Package: TO-39.

Operating temperature: -65 to 200 Deg C.

Note: Silicon bipolar.

Fast switching: 345ns.

Alternate: NTE129

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Motorola - 2N4393 - Transistor, N Ch JFET.

Voltage: 40V.

RDs on 80 Ohm @ 1mA.

Package: TO-18 gold leads.

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Transistor, NPN. Voltage: 80VCEO, 100VCB. Current: 10Amp. Dissipation: 150 watt. Operating temperature: -65 to 200 Deg C. Package: TO-3. Note: Silicon. Cross NTE385, ECG385. Learn More

Transistor, PNP. Max voltage: 80V. Max current: 5Amp. Dissipation: 10 watt. Package: TO-39 gold leads. P/N: 2N6190. Note: Silicon. Learn More

Motorola - 2N5879 - Power Transistor, PNP. 15A, 160W

Status: Discontinued

Material of Transistor: Si (Silicon)

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 160 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 4 MHz

Collector Capacitance (Cc): 600 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO3

Alternate: ECG285.

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Motorola - 2N5550 Transistor, NPN.

Max voltage: 140VCEO, 160VCBO.

Max current: 600mA.

Dissipation: 625mW.

Package: TO-92.

Note: Silicon.

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Motorola - 2N2369 Transistor, NPN.

Max voltage: 15VCEO, 40VCBO.

Max current: 200mA.

Dissipation: 360mW.

Package: TO-18.

Operating temperature: -65 to 200 Deg C.

Note: Silicon.

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