Transistors

Transistor, NPN silicon. Max voltage: 400V. Max current: 3.5Amp. Dissipation: 100 Watt, 1.33 Watt/Deg C. Package: TO-3. P/N: 2N3902. Application: Designed for use in high voltage inverters, converters, switching regulators and line operated amplifiers. Note: High Voltage. Operating temperature: -65 to 150 Deg C. Learn More

Transistor, NPN. Max voltage: 18VCEO, 36VCBO. Max current: 4Amp. Dissipation: 70 watt. Package: M135 0.380 4L stud epoxy sealed. P/N: 2N5591. Operating temperature: -65 to 150 Deg C. Application: Designed primarily for VHF mobile and marine transmitters. Note: RF & Microwave transistor 175MHz. Epitaxial silicon planar. Learn More

Transistor, PNP. Max voltage: 20VEBO, 25VCEO. Max current: 25Amp. Dissipation: 94 watt. Package: TO-41 aluminum. P/N: 2N1163. Note: Germanium. Learn More

Transistor, N Channel FET. Max voltage: 40V. Max current: 50mA. Dissipation: 1.8 watt. Package: TO-18. P/N: 2N4858. Operating temperature: -65 to 175 Deg C. Note: Silicon. Depletion, switching. RDS on: 60 Ohm. Learn More

Motorola - 2N4124 Transistor, NPN.  Small Signal Bipolar. TO-92.

Max voltage: 25VCEO, 30VCBO.

Max current: 200mA.

Dissipation: 625mw.

Package: TO-92. Operating temperature: -55 to 150 Deg C. 

Collector-base Capacitance-Max:              4.0 pF

Collector Current-Max (IC):         0.2 A

Collector-emitter Voltage-Max: 25.0 V

DC Current Gain-Min (hFE):         60.0

Operating Temperature-Max:    150.0 Cel

Power Dissipation Ambient-Max:              1.5 W

Power Dissipation-Max (Abs):    0.35 W

Transition Frequency-Nom (fT): 300.0 MHz

VCEsat-Max:      0.3 V

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Motorola - 2N3740 Transistor, PNP.

Status: Discontinued

Collector Current-Max (IC): 4.0 A

Collector-emitter Voltage-Max: 60.0 V

DC Current Gain-Min (hFE): 30.0

Package Body Materia: METAL, Package Shape: ROUND, Package Style: FLANGE MOUNT

Power Dissipation Ambient-Max: 25.0 W

Transition Frequency-Nom (fT): 4.0 MHz

Package: TO-66 / TO-213AA.

Operating temperature: -65 to 200 Deg C.

Alternates: BD244A, BD540A, BDX14, 2N6313, 2N6314, BDX14, 2N6313KT923B

NSN 5961-00-425-6333

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Transistor, PNP. Max voltage: 20VCEO, 30VCBO. Max current: 3 Amp. Dissipation: 62.5 watt. Package: TO-3. P/N: 2N2142. Note: Germanium. Learn More

PWR 4A 80V PNP TRANSISTOR Silicon PNP Power Learn More

Transistor, NPN. Max Voltage: 100V. Collector current: 7 Amp. Dissipation: 40 watt. Package: TO-66. P/N: 2N5429. Note: Silicon. Learn More

Transistor, PNP. Voltage: 45VCEO, 60VCBO. Current: 5 Amp. Dissipation: 90 Watt. Package: TO-3. P/N 2N1540. Note: germanium. Learn More

Motorola - 2N4427 - RF Small Signal Bipolar Transistor, Ultra High Frequency Band, NPN TO-39

Status:  Discontinued

Collector-base Capacitance-Max: 4.0 pF

Collector Current-Max (IC): 0.4 A

Collector-emitter Voltage-Max:  20.0 V

DC Current Gain-Min (hFE): 5.0

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Number of Elements: 1.0

Number of Terminals: 3

Package Body Material: MPN

Power Dissipation: 3.5W

Power Gain: 10.0 dB

Transition Frequency: 500 MHz

Note: CUT 3.4mm LEADS - New Old Stock

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N-Channel JFETs NEW TO-18 METAL Learn More

Transistor, PNP. Voltage: 45V. Current: 5 Amp. Dissipation: 90 watt. Package: TO-3. P/N: 2N1535. Note: Germanium. Used/Removed from equipment. Learn More

N-Channel Enhancement Mode MOSFET General Purpose Amplifier/SwitchTO-72 GOLD LEADS OBSOLETE Learn More

Transistor, NPN. Max voltage: 30VCE, 40VCB. Max current: 100mA. Dissipation: 360mW. Package: TO-18 gold leads. P/N: 2N4072. Note: Silicon. UHF Power amplifier. Military 5961-00-855-3463. Learn More

Transistor, PNP. Max voltage: 60V. Max current: 50mA. Dissipation: 360mW. Package: TO-18 3 leads. P/N: 2N3799. Operating temperature: -65 to 200 Deg C. Note: Amplifier, low noise. Silicon planar epitaxial. Learn More

Transistor, PNP. Max voltage: 80V. Max current: 8 Amp. Dissipation: 75 watt. Package: TO-220. P/N: 2N6041. Operating temperature: -65 to 150 Deg C. Note: Silicon darlington. Each piece is actually soldered on a mini circuit board. Learn More

Transistor, NPN. Max voltage: 45VCEO/60VCBO. Max current: 150mA. Package: TO-18 metal. P/N: 2N2897. Note: Amplifier/Switch. Learn More

Transistor, PNP. Max voltage: 30V. Max current: 30mA. Dissipation: 200mW. Package: TO-72 gold leads. P/N: 2N4957. Note: Silicon. RF small signal 450MHz 3dB. Cross NTE395. Learn More

Motorola 2N3498 - Transistor, NPN.

Max voltage: 100V.

Max current: 500mA.

Dissipation: 1 watt.

Package: TO-39 (TO-5).

Note: Silicon.

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NPN Silicon 40VCB 20VCE 30MA 360MW TO-52 metal test dot. Learn More

Transistor, NPN. Dual. Voltage: 30VCEO, 60VCBO. Current: 50mA. Dissipation: 200mW one die, 300mW both dice. Dissipation: 600mW at 25 Deg C = one die, 1200mW at 25 Deg C = both dice. Package: TO-78-6 metal. Note: Silicon epitaxial planar. Learn More

Transistor, PNP. Voltage: 40V. Current: 600mA. Dissipation: 625mW. Operating temperature: -55 to 150 Deg C. Package: TO-92, plastic. Note: Silicon. Package of 1000 pieces. Learn More

Transistor, PNP. Max voltage: 15VEBO, 30VCER, 45VCEO. Max current: 500mA. Dissipation: 225mW. Package: TO-39 gold leads. P/N: 2N527. Note: Germanium. Learn More