Transistors

Transistor, NPN. Max voltage: 50V. Package: Macro-XHS. P/N: MRW53001. Note: RF, UHF Microwave. Static current gain: 20 h(FE). Current gain: 120 @I(C) (A). Frequency: 3.0G. Ceramic SOE. Silicon. Learn More

Motorola - MRF517 - Transistor, NPN.

The MRF517 from MOTOROLA manufacturer is a RF Transistors (BJT) with TRANS RF BIPO 2.5W 150MA. The MRF517 is RF Transistor NPN 20V 150mA 4GHz 2.5W Through Hole TO-39 Trans RF BJT NPN 20V 0.15A 3-Pin TO-39 RF Bipolar Transistors Comm/Bipolar Transistor.

Voltage: 20VCEO, 35VCBO.

Max current: 150mA.

Dissipation: 2.5 watt @ 25 Deg C.

Gain: 9dB ~ 10dB

Frequency: 4GHz

Package: TO-39. Gold Leads

New Old Stock

Application: Low noice broadband amplifier; predriver, driver, and output stages. Note: RF & Microwave, VHF/UHF. Silicon, Gpe = 10 dB (typ) @ 60 mA, 300 MHz. 3 GHz Current-Gain Bandwidth Product (min) @ 60mA. Broadband Noise Figure = 7.5 dB @ 50mA, 300 MHz.

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Motorola - MRF327 - Transistor, NPN.

Guaranteed Performance @ 400 MHz, 28 Vdc Outpu t Power = 80 Watts over 225 to 400 MHz Band Minimum Gain = 7. 3 dB @ 400 MHz, Built–In Matching Network for Broad band Operation Using Double Match Technique, 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR

Max Voltage: 33VCEO, 60VCBO.

Max Current: 9Adc.

Dissipation: 250 watt.

Package: Case 316-01, style 1.

Operating Temperature: -65 to 150 Deg C.

Silicon RF power. 80W, 100 to 600MHz.

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Transistor, P Channel JFET. Max voltage: 40V. Max current: 10mA. Dissipation: 225mW. Package: SOT-23 SMD. P/N: MMBF5460LT1. Junction and storage temperature: -55 to 150 Deg C. Package of 20. Note: Silicon. Learn More

Transistor, PNP. Voltage: 100V. Current: 2Amp. Dissipation: 20 watt. Operating temperature: - 65 to 150 Deg C. Package: D-Pak SMD. Note: Silicon darlington. Learn More

Transistor, NPN. Max voltage: 750VCEO, 1500VCEX. Max current: 4Amp. Dissipation: 100 watt. Package: TO-3 steel. P/N: MJ12003. Note: Silicon. Learn More

IC. NPN Quad silicon annular switching transistor. Package: 14 Cdip. New. Learn More

Transistor, PNP. Voltage: -80V. Current: -5 Amp. Dissipation: 70 watt. Operating temperature: -55 to 150 Deg C. Package: TO-127. Note: Silicon darlington. Learn More

PNP Silicon Dual Amplifier Transistor New 40VCEO 50VCBO 575mwTO-5/6 leads Gold. Learn More

Motorola - MRF904 - Transistor, RF Small Signal.

Max Voltage: 15V.

Max Current: 30mA.

Dissipation: 200mw.

Gain: 4 GHz 15ma.

Package: TO-72-4 Gold Test Dotted (Case 20-03).

 

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Transistor, PNP. Voltage: 100V. Current: 4Amp. Dissipation: 15 watt. Operating temperature: -65 to 150 Deg C. Package: TO-225AA. Note: Silicon. Learn More

Transistor, NPN. Voltage: 100V. Current: 4Amp. Dissipation: 15 watt. Operating temperature: -65 to 150 Deg C. Package: TO-225AA. Note: Silicon. Learn More

Transistor, PNP. Max voltage: 80VCEO. Max current: 1Amp. Dissipation: 1 Watt. Package: TO-39 cut 1/2" gold leads, socket pulls. P/N: MM4006. Note: Silicon amplifier transistor. Operating temperature: -65 to 200 Deg C. Learn More

Transistor, PNP. Max voltage: 80V. Max current: 10Amp. Dissipation: 150 watt. Package: TO-3 aluminum gold leads. P/N: MJ2941. Application: audio amplifier circuits. Note: Silicon high power. Learn More

Transistor, N-Chl TMOS FET. Max voltage: 60V. Max current: 1.5 Amp. Dissipation: 0.8 watt. Gain: 0.18 Ohm. Package: SOT-223 SMD, 2 pin (Manuf 3pin with middle lead removed). P/N: MMFT3055EL. Note: N-Channel enhancement mode silicon gate. Operating temperature -65 to 150 DegC. Package of 7. Learn More

Motorola - MMBT3906LT1 Transistor, PNP.

Max voltage: 40V.

Max current: 200mA.

Dissipation: 300mW.

Package: SOT-23 SMD molded plastic.

Operating temperature: -55 to 150 Deg C.

Package of 50.

Note: Small Signal. Epitaxial planar.

Alternate / Equivalent: Infineon BC807-25E6433

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Transistor, PNP. Max voltage: 40VCEO, 50VCB. Max current: 1Amp. Dissipation: 25 watt. Package: TO-66 gold/steel. P/N: MJ3701. Note: Silicon. Learn More

Transistor, NPN/PNP. Max voltage: 30VCEO, 60VCBO. Max current: 500mA. Dissipation: 0.5mW each die / 0.9mW (4) die equal power. Package: TO-116, 14 Dip. P/N: MPQ6001N. Derate >25 degC: 4.0mW each die/7.2mW (4) die equal power. Note: Silicon. Quad - Complementary pair. Operating temperature: -55 to 150 Deg C. Learn More

Transistor, NPN. Max voltage: 250V. Max current: 5 Amp. Dissipation: 125 watt. Package: TO-3 . P/N: MJ3029. Application: TV horizontal and vertical deflection amplifier circuits. Note: High voltage. Learn More

Transistor, NPN. Max voltage: 500V. Max current: 10 Amp. Dissipation: 150 watt. Package: TO-3 . P/N: MJ10007. Application: High voltage, high speed, power switching in inductive circuits. Note: High voltage silicon darlington. Learn More

Transistor, PNP. Max voltage: 10V. Max current: 3 Amp. Dissipation: 1.56 watt. Package: Dpak-3. Learn More

Motorola - MTM35N06 - Transistor, N Channel MOSFET. Used Transistor, N Channel MOSFET. Enhancement Mode Silicon Gate. Max Voltage: 60V. Max Current: 35 Amp. Dissipation: 150 Watt. Operating Temperature: -65 to 150 Deg C. TMOS power. RDS on: 0.055 Ohm @ 17.5 Amp. Package: TO-3 Steel. Genuine Vintage Motorola – Rare – Used Learn More

Transistor, NPN. Max voltage: 400V. Max current: 10Amp. Dissipation: 125 Watt. Package: TO-3. P/N: MJ423. Operating temperature: -65 to 150 Deg C. Note: Silicon. High Voltage. Military NSN 5961-00-118-8441. Learn More

Transistor, NPN. Max voltage: 325V. Max current: 0.25Amp. Dissipation: 2.5 watt. Package: TO-66 aluminum, hermetically sealed. P/N: MJ400. Note: Bipolar. High Voltage. Learn More