Items 1-24 of 513
- CYPRESS SEMICONDUCTOR CORP - CY7C129-35PC - IC, memory. RAM9 QDR-I/DDR-I/QDR-II/DDR- II.Special Price $10.00 Regular Price $24.99
- INTEL - M38510/23803BVA - 2147H03 4Kx1 SRAM New CdipSpecial Price $49.95 Regular Price $69.00
- Advanced Micro Devices - MACH215-15JC-18JI - PLCC EE PROG/REGISTERED COMB OUTS$29.30
- MOSTEK - MK3853N - IC, Static Memory. - 8 Bit interface, DIP 40.Special Price $12.98 Regular Price $18.95 As low as $10.98IN STOCK - MORE THAN 100 READY TO SHIP!
MOSTEK - MK3853N - IC, Static Memory Interface.
8-Bit Static Memory Interface for up to 64KX8SRAM, ROM, or PROM
Package: 40 Dip.
LSI Type: NMOS
Operating Temperature: 0 C to 70 C
DC Supply Voltage: +5V/+12V
QUIESC POWER (Max): 710MXMW
Genuine Mostek Vintage Memory Interface IC - Rare - New Old Stock
Data Book: http://www.bitsavers.org/components/mostek/f8/1978_3870_F8_Microcomputer_Data_Book.pdf
Application: Every Mostek Microcomputer 3870/F8 System requires at least on of these devices.
Alternates: F3853PC, 18202027, 1820-2027, 5962-01-314-6462, 01-314-6462, 5962013146462, 013146462Learn More
- INTEL - P28F020-150 - IC, memory. CMOS Flash 2048K (256K x 8).$13.00
- IDT - IDT6168SA70DB - IC, memory. CMOS SRAM 16K (4K x 4-Bit).Special Price $39.95 Regular Price $55.00
- ALTERA - EP610DC-25 - IC. ELPD Programmed Erasable Memory.Special Price $6.98 Regular Price $19.50 As low as $4.98IN STOCK - MORE THAN 100 READY TO SHIP!
- FUJITSU - MBM27C256-25 - IC, EPROM, CMOS. 32K x 8 .$1.95
- ALTERA - EP1200-ES - Programmable Logic Device, FPGA, New.Special Price $24.98 Regular Price $84.50 As low as $18.98
ALTERA - EP1200-ES - Programmable Logic Device
FPGA - Field Programmable Gate Array
Altera EP1200 was the first high-density programmable logic device (PLD). Altera’s technology was manufactured using 3-μm complementary metal oxide semiconductor (CMOS) electrically programmable read-only memory (EPROM) technology and required ultraviolet light to erase the programming, whereas Xilinx’s technology was based on conventional static random access memory (SRAM) technology and required an EPROM to store the programming.
Altera EP1200 programmable logic device was introduced in 1985. The device used UV erasable technology and could hold the equivalent of 1200 logic gates.
28 On-Board Registers
236 Product Terms, on-board Latchesfor the inputs, Programmable I/O
Operate at clock speeds above 16 MHz.
Stand-by Power: 15mW, Active Mode: 400mW.
Package: 40 Pin Ceramic 600 mil DIP Package.
Genuine Altera - Vintage New Old Stock - Rare
Made in USA
When Introduced in 1985 the cost of the EP1200-ES FPGA cost was $129.50 each in quantities of 100.
The Altera PLE-12 Master Progamming unit and similar are used to program EP300, EP320, EP1200, and EP1210 devices.Learn More
- ACTEL - A1280XLPL84I - IC. Integrator Series FPGA. Pulls.$99.00
- Hitachi - HN27C256AG-10 - UV Erasable Programmable ROM, 32768-word × 8-bit, 28 Pin CDIPSpecial Price $5.98 Regular Price $9.50 As low as $3.98IN STOCK - MORE THAN 1,000 READY TO SHIP!
Hitachi - HN27C256AG-10 - UV Erasable Programmable ROM, 32768-word × 8-bit
Hitachi HN27C256AG is a 256-kbit ultraviolet erasable and electrically programmable ROM, featuring high speed and low power dissipation. Fabricated on advanced fine process and high speed circuitry technique, the HN27C256AG makes high speed access time possible for 16 bit microprocessors such as the 8086 and 68000. And low power dissipation in active and standby modes matches our CMOS 256-kbit EPROM. In programming operation, the HN27C256AG realizes faster programming times than our conventional 256-kbit EPROM by Hitachi’s Fast High-Reliability Programming Algorithm. Pin arrangement, pin configuration and programming voltage are compatible with our 256-kbit EPROM series, therefore existing programmers can be used with the HN27C256AG.
High speed -Access time: 100 ns (max)
• Low power dissipation - Active mode: 25 mW (typ) (f = 1 MHz), Standby mode: 5 µW (typ)
• High reliability and fast programming - Programming voltage: +12.5 V DC
Package: 600-mil 28-pin cerdip (DG-28)
Made in Japan
Alternate: Philips 27C256-20N
- Texas Instruments - TMS2708JL-35 - CDIP EPROM W/WINDOWSpecial Price $7.13 Regular Price $9.50
- SAMSUNG - KM416S1120AT-G10 - IC. Synchronous DRAM.$15.95
- Monolithic Memories - MMI - 6341-1N - IC, PROM Memory. 4096 Bit (512X8) Schottky 3-State, 24 Pin DIP, CMOSSpecial Price $6.98 Regular Price $10.50 As low as $4.98
Monolithic Memories - MMI - 6341-1N IC, Memory. CMOS
Programing with a commercially available programmer irreversibly converts selected elements in the array so they are sensed as ONE's of high logic level. MMI 6341-1N is an alternate for many other out of production/discontinued 4096 Bit Bipolar Programmable Read Only Memory ICs.
Type: Fuse-Programmable PROM, Schottky with 3-State Output.
Memory Width 8, Number Words: 512 (512 x 8).
Operating Mode: Asyncronous
Access Time: 70ns,
Supply Voltage: 5V.
Dimensions: 0.25" X 0.77" X 0.13"
Terminal Pitch: 2.54
Rare - New Old Stock.
Note: Data Sheets attached to confirm compatiability for your specific application.
Alternates/Supersedes/Replacements: NTE74S474, 1816-0929, 1816-1142, 1816-1163, 1M5625, 1M5625CDG, 1M5625CJG, 27S3, 29625D, 29625DC, 6341-1, 6341-1J, 6341-1N, 74S474, 74S474J, 74S474N, 82S141, 82S141F, 82S141N, 93448D, 93448DC, 93448P, 93448PC, AM27S31, AM27S31D, AM27S31DC, B3624A-2, B3624A(PROM), B3624(PROM), B425C-E(PROM), B425C(PROM), B425D-E(PROM), B425D(PROM), B425-E(PROM), B425(PROM), C3624A-2, C3624A(PROM), C3624(PROM), D3624-2, D3624(PROM), DM74S474, DM74S474J, DM74S474JL, DM74S474N, DM74S474NL, ECG74S474, F93448, F93448D, F93448DC, F93448P, F93448PC, HM1-7641, HM1-7641-5, HM1-7641A, HM1-7641A-5, HM3-7641, HM3-7641-5, HM3-7641A, HM3-7641A-5, HM-7641, HM-7641A, IM5625, IM5625CDG, IM5625CJG, MCM7641, MCM7641D, N82S141, N82S141F, N82S141N, NTE74S474, P3624, P3624A, P3624A-2, SN74S474, SN74S474J, SN74S474N, TBP18S46, TBP18S46J, TBP18S46N, UPB425, UPB425C, UPB425C-E, UPB425D, UPB425D-E, UPB425-ELearn More
- MITSUBISHI - M5K4164ANP-15 - IC, Memory. 65,536 word x 1 Bit DRAM. New.Special Price $3.98 Regular Price $5.00 As low as $1.98
MITSUBISHI - M5K4164ANP-15 IC, Memory.
This is a family of 65 536-word by l-bit dynamic RAMs, fabricated with the high performance N-channel silicon gate MOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer polysilicon process technology and a single-transistor dynamic storage cell privide high circuit density at reduced costs, and the use of dynamic circuitry including sense amplifiers assures low power dissipation. Multiplexed address inputs permit both a reduction in pins to the standard 16-pin package configuration and an increase in system densities. The M5K4164ANP operates on a 5V power supply using the on-chip substrate bias generator.
65,536 Word x 1 Bit
DRAM Page Mode.
Package: 16 DIP.
New Old Stock.Learn More
- INTEL FLASH - E28F002BC-T80 - IC, memory. 2-Mbit (256K x 8). SMD.$39.00
- INTEL FLASH - E28F002BV-T60 - IC, memory. 2-Mbit. Case: SMD.$39.00
- HITACHI - HM62256BLFP-7T - IC. memory. CMOS SRAM 28SMD.$9.99
- FUJITSU - MBM2764-25 - IC, memory. MOS 8192 x 8 Bit. UV erasable. New.$10.00
- EDI - EDI88128C70ZC - IC, memory. SRAM 1Mb (128K x 8) 70nS.$79.00
- CYPRESS SEMICONDUCTOR CORP - CY7C330-66JC - IC. Logic ELPD.$19.95