Miscellaneous

Vacuum tube. Package: 7-Pin mount. Learn More

Tube, electron. Type: Transmitting triode, air cooled. VHF. 5V 10.5Amp 100Watt. Dimensions: 100mm wide x 68mm deep x 138mm high (3.94" x 2.68" deep x 5.43" high). Learn More

EIMAC - JAN-CIM-100TH  Tube, Electron.

Modulator Oscillator Amplifier - 100 Watt

High-Mu Power Triode for Radio Transmitters

Upper and lower cathods are Uranium Glass.

White ceramic base platinum grid

Base: 4 pin, 34.7mm D x 28.1mm high.

Dimensions: Glass Tube 3.066" x 6-1/8" long plus base.

Proudly Made in the USA.

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Modulator Oscillator Amplifier Tube. Radial beam power tetrode. Filament: Thoriated Tungsten. Voltage: 5V. Current: 6.5Amp. Application: For use as an amplifier, oscillator, or modulator. Maximum plate-dissipation 125 Watt. Maximum plate-voltage 3000V (3KV) at frequencies up to 120 Mc. Base: 5 pin metal shell. Dimensions: 2.75" D x 5.69" long. Note: ALT P/N: RMA 4D21. Made in the USA. New In Mfg. Box.

Additional information at http://tubecollectors.org/eimac/archives/4125a(47).pdf

 

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Crystal. 4.194MHz. Package: HC49/U metal can. Learn More

4.00Mhz Crystal Oscillators New. Learn More

11.0592MHhz Crystal oscillators New. Learn More

DOW CORNING - POW SLS SEH-39 B6623297DH – Semiconductor Silicon Wafer. Silicon Wafer Dimensions: 1.002” – 1.006" Diameter x 0.510” – 0.513” Thick. Wafers are formed of highly pure (99.9999999% purity) nearly defect-free single crystal material. Unpolished Perfectly Pure Silicon except for the doped impurities. Type: POW (P Type) Breakdown of what a P-Type (Positive) wafer means: • Dopant (Impurity): P-type silicon is created by adding trivalent elements (Group III on the periodic table), such as Boron, to pure silicon. • Charge Carrier: These dopants create an excess of positive charge carriers, known as "holes". • "P" Stands for Positive: The "P" refers to the positive charge of the holes. • Applications: P-type wafers are commonly used in solar cells, CMOS technology, and as a base substrate for integrated circuits (ICs) and transistors. • Distinction: P-type wafers are usually distinguished from N-type (Negative/Phosphorus-doped) wafers, which use electrons as primary charge carriers. Key Characteristics of P-type Wafers: • Lower Conductivity: Generally lower conductivity compared to N-type. • Good Performance: Ideal for hole transport in solar cell applications. • Compatible with CMOS: Used extensively in standard semiconductor fabrication. Theoretically millions of P/N junctions could be made from this man-made crystal. In applications wafers are thin slices Value: The value of a (25.4mm) 1.0” Diameter x (12.7mm) 0.5” thick silicon wafer typically ranges between $50 - $250 depending on its grade and surface finish. Because this thickness is exceptionally high for a standard "wafer" (which are usually less than 1mm (Thick), this item is often categorized as a silicon window, mirror blank, or optical substrate. A 25.4mm (1-inch) diameter, 12.7mm thick silicon wafer is a thick, small-diameter substrate primarily used for research and development, specialty optical components, or as a structural component rather than for standard microchip fabrication. Due to its extreme thickness relative to standard wafers (typically <1mm), it is ideal for precision polishing, infrared (IR) optics, high-load testing, and as a stable substrate in materials science research. Applications: Solar Cells, CMOS Technology, Science Project or Show + Tell. New Old Stock Made in Japan Learn More

Crystal Oscillator. 6.00MHz. Case: 4 Dip wide. Learn More

DELFT INSTRUMENTS MEDICAL - ANC-06 - ANODICA 6 CAMERA SYSTEM 100MM SFC 6FPC CAMERA SYSTEM w/ 142G000 Take-Up Magazine (85 Film Capacity) & 142H000 Supply Magazine (130 film Capacity) W/ Tech manual & Operating Instructions in each box & Free Cardboard Note: New Cost was Originally over $29,000 New Old Stock Learn More

NEW 32.00MHZ CRY OSC 4-PIN IN A 16-DIP CAN Learn More

Crystal oscillators. 10MHz. Case: 4 Dip, 1/2 crystal can. New. Learn More

Crystal Oscillator. 8.00MHz. Case: 4 Dip wide. Mount: PCB, 4 pin. Dimensions: 20.6mm long x 13.0mm wide x 4.3mm high. Lead spacing: approximately 16.5mm centers. Learn More

Crystal Oscillator. 25.2MHz. Case: 4 Dip wide. Mount: PCB, 4 pin. Dimensions: 20.6mm long x 13.0mm wide x 4.3mm high. Lead spacing: approximately 16.5mm centers. Learn More

Crystal oscillator. 20.00MHz. Package: 4 Dip in a 16 Dip outline. Learn More

Crystal oscillator. 18.868MHz. Package: 4 Dip in a 16 Dip outline. Learn More

Crystal oscillator 4.00MHz. Case: 4 pin rectangular. Learn More

Crystal oscillator. 6.144MHz. Learn More

8.000MHZ CRY OSC NEW Learn More

NEW 6.0MHZ CRY OSC TUBED (14-pin dip Package Style) Learn More

NEW CRYSTAL OSCILLATOR 8.00MHZ CMOS/TTL FULL SIZE (14-pin dip Package Style) Learn More

CTS - MPO20-2.00MHZ

2.00Mhz crystals HC33/U

New

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CTS - MPO18-1.8432 MHZ - NEW HC33/U 1.8432MHZ CRYSTALS BULK

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Crystal. 12.00MHz. Package: HC18U radial 2 leads. Learn More