Specialized

Tubing, heat shrink. 1", 600V 125 Degree C. Black. Package of 4 feet. Learn More

Transistor, NPN. Max voltage: 600VCEO 1500VCBO. Max current: 12Amp. Dissipation: 50 watt. Package: TO-3P(H)IS package (TO-247). P/N: 2SC5048. Note: Silicon. High speed, high voltage. Cross NTE2365. Learn More

ST Microelectronics - STGP7NC60HD - Transistor, N Channel. 600V 14Amp 80W. IGBT. Transistor, N Channel. Max voltage: 600V. Max current: 14Amp. Dissipation: 80 Watt. Package: TO-220 (metal tab). Very fast Power Mesh IGBT. High Voltage. Learn More

ST Microelectronics - STGF7NC60HD Transistor, N Channel.

Max voltage: 600V.

Max current: 6Amp.

Dissipation: 25 watt.

Package: TO-220FP (plastic tab). 

Note: Very fast PowerMesh IGBT.

High Voltage.

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Transistor, N Channel Mosfet. Max voltage: 800V. Max current: 2.5Amp. Dissipation: 25 watt. Package: TO-220FP (plastic tab). P/N: STF3NK80Z. Note: Zener protected. SuperMesh. RDS on: 4.5 Ohm. High Voltage. Learn More

Transistor, N Channel Mosfet. Max voltage: 400V. Max current: 10.7Amp. Dissipation: 40 watt. Package: TO-220FP (Plastic). P/N: STP11NB40FP. Note: PowerMesh. RDS on: 0.55 Ohm. High Voltage. Learn More

Transistor, N Channel Mosfet. Max voltage: 700V. Max current: 7.5Amp. Dissipation: 35 watt. Package: TO-220FP (Plastic). P/N: STP9NK70ZFP. Note: Zener protected. SuperMesh. RDS on: 1.2 Ohm. High Voltage. Learn More

Transistor, N Channel Mosfet. Max voltage: 1200V. Max current: 5Amp. Dissipation: 150 watt. Package: TO-220 (metal tab). P/N: STP6N120K3. Note: Zener protected. SuperMesh3. RDS on: 2.4 Ohm. High Voltage. Learn More

ST Microelectronics - STP4N90 Transistor, N Channel Mos.

Max voltage: 900V.

Max current: 3.6Amp.

Dissipation: 100 watt.

Package: TO-220 (metal tab).

Note: Enhancement mode.

RDS on: 3.5 Ohm.

High Voltage.

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Transistor, N Channel Mosfet. Max voltage: 400V. Max current: 5.4Amp. Dissipation: 70 watt. Package: TO-220 (metal tab). P/N: STP7NK40Z. Note: Zener protected. SuperMesh. RDS on: 1 Ohm. High Voltage. Learn More

Transistor, N Channel Mosfet. Max voltage: 800V. Max current: 5Amp. Dissipation: 40 watt. Package: TO-220FP. P/N: STP5NB80FP. Note: PowerMesh. RDS on: 2.2 Ohm. High Voltage. Learn More

ST Microelectronics - STB14NK50ZT4 - Transistor, N Channel MOSFET. SMD, Rare The STMicroelectronics STB14NK50ZT4 is a high-performance N-channel Power MOSFET developed using the Zener-protected SuperMESH™ technology. It is specifically designed for demanding high-voltage switching applications, such as switch-mode power supplies (SMPS) and DC-DC converters. Key Technical Specifications Drain-Source Voltage (Vpss): 500 V. Continuous Drain Current (Ip): 14 A at 25C. Static Drain-Source On-Resistance (Rps): 380 mOhm (maximum). Total Power Dissipation (Ptot): 150 W. Package Type: D²PAK (TO-263), a surface-mount package. Gate Charge (og): 92 nC typical (optimized for fast switching). Operating Temperature Range: -55C to 150C Core Features & Benefits SuperMESH™ Technology: This represents an optimization of the standard PowerMESH™ layout, significantly reducing on-resistance and improving dv/dt capability for better switching performance. Zener Protection: Includes integrated Zener protection to enhance ruggedness against voltage spikes. Avalanche Ruggedness: 100% avalanche tested to ensure reliability under extreme inductive load switching. Core Features & Benefits • SuperMESH™ Technology: This represents an optimization of the standard PowerMESH™ layout, significantly reducing on-resistance and improving capability for better switching performance. • Zener Protection: Includes integrated Zener protection to enhance ruggedness against voltage spikes. • Avalanche Ruggedness: 100% avalanche tested to ensure reliability under extreme inductive load switching. Factory New Learn More

ST Microelectronics - STD5NM50 Transistor, N Channel Mosfet.

Max voltage: 500V.

Max current: 7.5Amp.

Continuous Drain Current (ID); 7.5 A

Drain to Source Resistance: 800 mΩ

Fall Time: 6 ns

Gate to Source Voltage (Vgs): 30 V

Input Capacitance: 415 pF

Operating Temperature: -55 °C  to 150 °C

Power Dissipation: 100 W

Rise Time: 8 ns

Turn-On Delay Time: 16 ns

Dimensions: Height 2.4 mm, Length 6.6 mm, Width 6.2 mm

Package: Dpak.

Note: Mdmesh. RDS on 0.8 Ohm.

High Voltage.

Alt P/N STD5NM50T4.

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ST Microelectronics - STD3PK50Z - Transistor, P Channel MOSFET. 500V 2.8Amp 85W. DPAK-3. The STD3PK50Z is a high-voltage, P-channel Power MOSFET manufactured by STMicroelectronics. It is part of the SuperMESH™ series, which uses an optimized layout to reduce on-resistance while maintaining high robustness. Status: Discontinued Technology: Si Mounting Style: SMD/SMT Package / Case: DPAK-3 (TO-252-3) Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 500 V Id - Continuous Drain Current: 2.8 A Rds On - Drain-Source Resistance: 4 Ohms Vgs - Gate-Source Voltage: - 30 V, 30 V Qg - Gate Charge: 20 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 70/85 W Channel Mode: Enhancement Transistor, P Channel mosfet. Max voltage: 500V. Max current: 2.8Amp. Dissipation: 85 watt. Package: Dpak SMD. New. P/N: STD3PK50Z. Note: SuperMesh. RDS on 4 Ohm. High Voltage. Learn More

Transistor, N Channel mosfet. Max voltage: 800V. Max current: 3Amp. Dissipation: 80 watt. Package: 3 Pin Ipak full leads. New. P/N: STD4NK80Z . Note: Zener protected supermesh. RDS on 3.5 Ohm. High Voltage. Learn More

NEC Corp - 2SK2141 Transistor, N Channel Mosfet.

Max voltage: 600V.

Max current: 6Amp.

Dissipation: Ta 2 watt.

Tc 35 watt.

Both at 25 Deg C.

Package: TO-220.

New.

Note: RDS on 1.1 Ohm.

Alternate: NTE2974. High Voltage.

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Tubing, heat shrink. 3/8" black, 600V 125 Deg C. Package of 5 ft. Learn More

Tubing, heat shrink. 1/2" black, 600V 125 Deg C. Package of 5 ft. Learn More

Transistor, NPN. Max voltage: 400VCEO 500VCBO. Max current: Collector current 8Amp. Base current 4Amp. Dissipation: 50 watt. Package: TO-220. P/N: 2SC2898. Application: High voltage, high speed and high power switching. Note: Silicon. Triple diffused. High Voltage. Cross NTE379. New, bulk packaged. Note: 15 pcs Hitachi, 2 additional Pcs are unmarked manufacture. Cross NTE379. Learn More

Multi-line phone switch. 5-Line selector. Attached 25 position/Male/Female blue-ribbon connector. Complete with user's instructions. New. Learn More

CLAROSTAT - VR-003 - Rheostat. 2 Ohm. Vintage Radio Tube Filament Control, New Old Stock.

Used in series with tube filaments to adjust current. Extends the "useful" life of RF tubes to keep the emission of the tube above the recommended minimum for the maximum amount of time.

Resistance: 2 Ohm.

Technology: Wirewound.

Mount: Panel.

Threaded Bushing: 3/8" D x 11.3mm long,

Shaft: 1/4" D x 2.5mm high. Screw Driver Adjustable.

Contacts: 2 Solder Hooks.

Marked 140-660, X-4094-C.

Alternates/Similar: Carter Radio Co. / Central Radio Laboratories Pot Control Wire Wound Rheostats

Genuine Vintage Clarostat - New Old Stock 

Made in USA

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NTE Electronics Inc. - NTE5910 - Rectifier.

Mount: Stud

Number of Pins: 2

Forward Current: 16 A

Forward Voltage: 1.23 V

Max Forward Surge Current (Ifsm): 310 A

Operating Temperature: 65 °C to 175 °C

Max Repetitive Reverse Voltage (Vrrm): 1 kV

Peak Non-Repetitive Surge Current: 310 A

Peak Reverse Current: 12 mA

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J.W.MILLER - 50A475EBI Inductor.

26.5 - 58.7uH adjustable encapsulated.

[email protected].

Mount: panel.

Dimensions: 0.437" D x 1" long.

Complete with manufactures specification sheet.

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Inductors, toroid core. Military. Dimensions: OD - oval 2.59" long x 1.548" deep x 0.525" high. ID: rectangular 1.525" long x 0.482" deep x 0.525" high. Actually each is 2 piece/match. Learn More